Journal of the Institute of Electronics Engineers of Korea SD (대한전자공학회논문지SD)

The Institute of Electronics and Information Engineers (대한전자공학회)
권호 표지

Characteristics of Shallow $P^{+}$-n Junctions Including the FA Process after RTA

RTA 후 FA 공정을 포함한 $P^{+}$-n 박막 접합 특성

  • Han, Myeong-Seok (Dept.of Computer Electronics Electric, Daecheon College) ;
  • Kim, Jae-Yeong (School of Electro., Telecomm. and Computer Eng., Hankuk Aviation Uvi.) ;
  • Lee, Chung-Geun (School of Electro., Telecomm. and Computer Eng., Hankuk Aviation Uvi.) ;
  • Hong, Sin-Nam (School of Electro., Telecomm. and Computer Eng., Hankuk Aviation Uvi.)
  • 한명석 (대천대학 컴퓨터전자전기학부) ;
  • 김재영 (한국항공대학교 전자정보통신 컴퓨터 공학부) ;
  • 이충근 (한국항공대학교 전자정보통신 컴퓨터 공학부) ;
  • 홍신남 (한국항공대학교 전자정보통신 컴퓨터 공학부)
  • Published : 2002.05.01
Download PDF
⟨ Previous Next ⟩

Abstract

This paper suggests the optimum processing conditions for obtaining good quality $P^{+}$-n shallow junctions formed by pre-amorphization and furnace annealing(FA) to reflow BPSG(bore phosphosilicate glass). $BF_2$ions, the p-type dopant, were implanted with the energy of 20keV and the dose of 2$\times$10$^{15}$ cm$^{-2}$ into the substrates pre-amorphized by As or Ge ions with 45keV, 3$\times$$10^{14}$ $cm^{-2}$. High temperature annealings were performed with a furnace and a rapid thermal annealer. The temperature range of RTA was 950~$1050^{\circ}C$, and the furnace annealing was employed for BPSG reflow with the temperature of $850^{\circ}C$ for 40 minutes. To characterize the formed junctions, junction depth, sheet resistance and diode leakage current were measured. Considering the preamorphization species, Ge ion exhibited better results than As ion. Samples preamorphized with Ge ion and annealed with $1000^{\circ}C$ RTA showed the most excellent characteristics. When FA was included, Ge preamorphization with $1050^{\circ}C$ RTA plus FA showed the lowest product of sheet resistance and junction depth and exhibited the lowest leakage currents.

본 논문에서는 선비정질화 이온주입과 BPSG(boro-phosphosilicate glass)를 위한 FA(furnace anneal) 공정이 적용된 양질의 p/sup +/-n 박막 접합을 형성하는 공정 조건을 제시하였다. 단결정 실리콘 기판을 As과 Ge 이온으로 45keV와 3×10/sup 14/cm/sup -2/로 주입하여 선비정질화 하였으며, p형 이온으로는 BF₂ 이온을 20keV, 2×10/sup 15/cm/sup -2/로 주입하였다. 고온 열처리는 furnace와 급속 열처기로 수행하였으며, 급속 열처리 온도는 950∼1050℃이며 FA는 BPSG 공정을 위해 850℃/4O분간 수행하였다. 박막 접합의 특성을 고려하기 위해 접합깊이, 면저항 및 다이오드 누설 전류를 측정 ·분석하였다. Ge 이온으로 선비정질화 하였을 경우 As 이온보다 대부분의 접합 특성에서 우수한 결과를 나타내었다. Ge으로 선비정질화하고 1000℃의 RTA를 수행한 경우에 가장 양호한 특성을 나타내었으며, FA를 포함한 경우에는 RTA 1050℃+FA의 열처리 조건에서 Ge 이온으로 선비정질화 했을 때 면저항과 접합깊이의 곱 및 누설 전류에서 양호한 특성을 나타내었다.

Keywords

References

  1. Akio Nishida, Eiichi Murakami and Shin'ichiro Kimura, 'Characteristics of Low-Energy $BF_2$or As-implanted Layers and Their Effect on the Electrical Performance of $0.15{\mu}m$ MOSFET's', IEEE Transactions an Electron Devices., Vol. 45, No. 3, pp. 701-709, March. 1998 https://doi.org/10.1109/16.661231
  2. Sultan, A Banerjee, S. List, S. Pollack, G. Hosack, H. 'Evaluation of Si pre-amorphization for obtaining ultra-shallow junctions', Proceedings of the 11th International Conference on Ion Implantation Technology, pp. 25-28, 1997
  3. Shin-Nam Hong, '$0.2{\mu}m$ $p^+-n$ Junction Characteristics Dependent on Implantation and annealing Process', IEEE Electron Device lett., Vol. 20, No. 2, pp. 83-85, Feb. 1999 https://doi.org/10.1109/55.740659
  4. Jong-Wan Jung, Young-Jong Lee, Jeong-Mo Hwang, Kyung-Ho Lee, 'The effect of ILD material and BPSG densification anneal on the device characteristics', '99 ICVC 6th International Conference VLSI and CAD, pp. 473-475, 1999 https://doi.org/10.1109/ICVC.1999.820972
  5. S.J. Kwon, HJ. Kim, J.D. Lee, '$As^+$ preamorphization method for shallow $p^+-n$ junction formation', Jpn J. apply. Phys., Vol. 29, No. 12, pp. L2326-L2328, Dec. 1990 https://doi.org/10.1143/JJAP.29.L2326
  6. Jinning Liu, Ukyo Jeong, Marylou Meloni, Sandeep Mehta, Che-Hoo Ng 'Effects of pre-amorphization on junction characteristics and damage behavior in low energy boron implantation' Ion Implantation Technology Conference on 2000, pp. 191-194, 2000 https://doi.org/10.1109/.2000.924122
  7. Shin Nam Hong, Gary A Ruggles, Jimmie J. Wortman, Mehmet C. Qzturk, 'Material and Electrical Properties of Ultra-Shallow $p^+-n$ Junction Formed by Low-Energy Ion Implantation and Rapid Thennal Annealing', IEEE Trans. Electron Device., Vol. 38, No. 3, pp. 476-486, Mar. 1991 https://doi.org/10.1109/16.75156
  8. 홍신남, 김재영, '이온주입 및 열처리 조건에 따른 박막 접합의 특성 비교', 대한전자공학회, 제35권 D편(7), 94-101쪽, 1998년 7월
  9. H. Mikoshiba, H. Abiko, 'Junction depth Versus Sheet Resistivity in $BF_2^+$ implanted Rapid Thermal Annealing silicon', IEEE Electron Device Lett., Vol. 7, No. 3, pp. 190-192, March 1986 https://doi.org/10.1109/EDL.1986.26340