Journal of the Korean Vacuum Society (한국진공학회지)

The Korean Vacuum Society (한국진공학회)
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Characterization of amorphous Sb-Bi-Te thin films as a function of Bi concentration

Bi 농도에 따른 비정질 Sb-Bi-Te 박막의 특성

  • ;
  • D. Mangalaraj (Thin Film Lab., Department of Physics, Bharathiar University) ;
  • 이재형 (성균관대학교 전기전자 및 컴퓨터공학부) ;
  • ;
  • 이준신 (성균관대학교 전기전자 및 컴퓨터공학부)
  • Published : 2002.04.01
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Abstract

Thin films of $Sb_{2-x}Bi_xTe_3$ (x = 0.0, 0.5, and 1.0) are grown by vacuum evaporation. XRD analysis shows the amorphous nature of the films, and the composition studies confirm the stoichiometry of the films. Microstructural parameters of the films have been calculated and used to explain the electrical and optical properties of the films. It is observed that the carrier type has changed from p- to n-type at higher concentration (x = 1.0) of Bi. The resistivity of the films decreases rapidly with the increase of Bi concentration. However, the refractive index and optical band gap of the films increase with the Bi concentration.

진공 증착한 $Sb_{2-x}Bi_xTe_3$ 박막은 Bi 농도에 관계없이 비정질 형태로 성장되었고, XPS 분석 결과 증착 물질과 거의 유사한 조성을 가짐을 알 수 있었다. 또한 박막의 광학적, 전기적 특성을 설명하기 위해 여러 미세구조 파라미터들을 계산하였다. 한편, 박막 내 Bi 농도가 증가함에 따라 전기 비저항은 급격히 감소하였고, 특히 높은 Bi 농도(x=1.0)에서는 전도 특성이 p-type에서 n-type으로 변화되었다. 또한 $Sb_{2-x}Bi_xTe_3$ 박막의 굴절 지수 및 광학적 밴드 갭은 Bi 농도에 따라 증가하였다.

Keywords

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