Journal of the Korean Ceramic Society (한국세라믹학회지)

The Korean Ceramic Society (한국세라믹학회)
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Microstructure and Ferroelectric Properties of PZT Thin Films Deposited on various Interlayers by R.F. Magnetron Sputtering

R.F. Magnetron Sputtering으로 다양한 Interlayer 층위에 형성시킨 PZT 박막의 미세구조와 강유전 특성

  • Park, Chul-Ho (Department of Inorganic Materials and Engineering, Pusan National University) ;
  • Choi, Duck-Young (Department of Inorganic Materials and Engineering, Pusan National University) ;
  • Son, Young-Guk (Department of Inorganic Materials and Engineering, Pusan National University)
  • 박철호 (부산대학교 무기재료공학과) ;
  • 최덕영 (부산대학교 무기재료공학과) ;
  • 손영국 (부산대학교 무기재료공학과)
  • Published : 2002.01.01
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Abstract

The PZT thin films werre deposited on Pt/Ti/$SiO_2$/Si substrate by R. F. magnetron sputtering with $Pb_{1.1}Zr_{0.53}Ti_{0.47}O_3$ target. When interlayers(PbO, $TiO_2$, PbO/$TiO_2$) were inserted between PZT and Pt, the crystallization of the PZT thin films was considerably improved and the processing temperature was lowered. Compared to the pure PZT thin films, dielectric constant, dielectric loss and polarization properties of PZT thin films with interlayers were considerably improved. From XPS depth profile analysis, it was confirmed that PZT thin films and interlayers existed independently. In particular, PZT thin films deposited on interlayer(PbO/$TiO_2$) showed the best dielectric property (${\varepsilon}_r$=414.94, tan${\delta}$=0.0241, Pr=22${\mu}C/cm^2$).

R. F. magnetron sputtering법을 이용하여 Pt/Ti/$SiO_2$/Si 기판 위에 $Pb_{1.1}Zr_{0.53}Ti_{0.47}O_3$ target을 사용하여 박막을 제조하였다. Interlayer(PbO, $TiO_2$, PbO/$TiO_2$)층을 삽입함으로써 박막의 결정성을 향상시켰고, 박막의 기판온도도 상당히 낮출 수 있었다. 순수한 PZT에 비하여 interlayer를 삽입한 PZT는 높은 유전상수과 낮은 유전손실 및 높은 누설전류를 가지는 우수한 전기적 특성을 나타내었다. 이러한 PZT 박막과 interlayer 층은 증착온도에서 서로 반응하여 하나의 고용체를 이루지 않고, 각각 독립적인 층으로 존재함을 XPS 분석을 통해 확인하였다. 여러 interlayer중 특히 PbO/$TiO_2$는 우수한 유전특성(${\varepsilon}_r$=414.94, tan${\delta}$=0.0241, Pr=22${\mu}C/cm^2$)을 나타내었고 가장 효과적인 seed로써의 역할을 하였다.

Keywords

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