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FHD 공정으로 제조한 실리카 막의 저온 고밀화

Low Temperature Consolidation of Silica Film by Flame Hydrolysis Deposition

  • 김태홍 (한국전자통신연구원 정보화기술연구소) ;
  • 윤기현 (연세대학교 세라믹 공학과)
  • Kim, Tae-Hong (Information Technology Research Group, Electronics and Telecommunication Research Institute) ;
  • Yoon, Ki-Hyun (Department of Ceramic Engineering, Yonsei University)
  • 발행 : 2002.01.01

초록

화염가수분해증착(FHD : Flame Hydrolysis Deposition)공정으로 평면형 광수동소자를 구현하기 위한 1050$^{\circ}C$의 저온에서 실리카(silica)막을 형성하였다. 본 연구는 실리카 막을 저온에서 형성하기 위하여 B, P 의 함량을 증가시키면서 고밀화 온도 변화 및 고밀화 분위기에 따른 미세구조의 변화 등 고밀화 영향과 광학적 특성을 관찰하였다. He 분위기에서 고밀화한 경우 적정 고밀화 온도를 1050$^{\circ}C$까지 낮출 수 있었고, 그 결과 표면조도(Surface Roughness)가 5.6nm인 균질한 실리카 막을 저온에서 형성할 수 있었다.

For planar optical devices, silica film deposited by FHD was fabricated at low temperature. To prepare silica film at low temperature, we have changed B, P amounts and investigated consolidation effect with varying consolidation temperature and atmosphere on microstructural change, and also observed optical property. The optimum consolidation temperature in He was lower than that of other atmosphere, its temperature could be lowered to 1050$^{\circ}C$. As a result, the roughness of flat silica film prepared at 1050$^{\circ}C$ showed 5, 6nm.

키워드

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