ETRI Journal

Electronics and Telecommunications Research Institute (한국전자통신연구원)
권호 표지

Optimization of Selective Epitaxial Growth of Silicon in LPCVD

  • Received : 2003.01.20
  • Published : 2003.12.31
Download PDF
⟨ Previous Next ⟩

Abstract

Selective epitaxial growth (SEG) of silicon has attracted considerable attention for its good electrical properties and advantages in building microstructures in high-density devices. However, SEG problems, such as an unclear process window, selectivity loss, and nonuniformity have often made application difficult. In our study, we derived processing diagrams for SEG from thermodynamics on gas-phase reactions so that we could predict the SEG process zone for low pressure chemical vapor deposition. In addition, with the help of both the concept of the effective supersaturation ratio and three kinds of E-beam patterns, we evaluated and controlled selectivity loss and non-uniformity in SEG, which is affected by the loading effect. To optimize the SEG process, we propose two practical methods: One deals with cleaning the wafer, and the other involves inserting dummy active patterns into the wide insulator to prevent the silicon from nucleating.

Keywords

References

  1. IEEE Trans. Electron Devices v.45 no.3 DRAM Technology Perspective for Gigabit Era Kim, K.N.;Hwang, C.G.;Lee , J.G.
  2. Symp. VLSI Tech Dig. A 0.115 ${\mu}m2$ 8F2 DRAM Working Cell with LPRD(Low_Prasitic_Resistance Device) and Poly Metal Gate Technology for Gigabit DRAM Noh, H.P.(et al.)
  3. J. Electrochem. Soc. v.133 no.4 Silicon Homoepitaxy by Rapid Thermal Processing Chemical Vapor Deposition (RTCVD) - A Review Hsieh, T.Y.;Jang, K.H.;Kwong, D.L.;Lee, S.K.
  4. J. Electrochem. Soc. v.141 no.4 Selectivity Mechanisms in Low Pressure Selective Epitaxial Silicon Growth Fitch, J.T.
  5. Thermodynamic Analysis of Selective Epitaxial Growth of Silicon;Chemical Vapor Deposition 2000, PV 2000-13, P. 411, The Electrochemical Society Proc. Series Cheong, W.S.;Jung, J.H.;Park, J.W.;Ahn, D.J.;Allendorf, M.D.(ed.);Hitchman, M.L.(ed.)
  6. J. Crystal Growth v.204 Observation of Nanometer Silicon Clusters in the Hot-Filament CVD Process Cheong, W.S.;Hwang, N.M.;Yoon, D.Y.
  7. J. Crystal Growth v.206 Deposition Behavior of Si on Insulating and Conducting Substrates in the CVD Process: Approach by Charged Cluster Model Hwang, N.M.;Cheong, W.S.;Yoon, D.Y.
  8. J. Mater. Sci. Lett. v.13 Driving Force for Deposition in the Chemical Vapour Deposition Process Hwang, N.M.;Yoon, D.Y.
  9. Mater. Sci. Eng. v.B17 The Selective Epitaxial Growth of Silicon Goulding, M.R.
  10. J. Korean Phy. Soc. v.40 no.4 SEG-MOSFET Degradation due to In-Diffusion from a BPSG Layer Lee, J.H.;Choi, J.H.;Cheong, W.S.
  11. RCA Rev. v.31 Cleaning Solutions Based on Hydrogen Peroxide for Use in Silicon Semiconductor Technology Kern, W.;Puotinen, D.A.