Journal of the Korean Society for Precision Engineering (한국정밀공학회지)

Korean Society for Precision Engineering (한국정밀공학회)
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The Parameter Determination of a Scribing Machine for Semiconductor Wafer

반도체 웨이퍼용 스크라이빙 머신의 파라메터 결정

  • 차영엽 (원광대학교 기계공학부) ;
  • 최범식 (원광대학교 대학원 기계공학과)
  • Published : 2003.02.01
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Abstract

The general dicing process cuts a semiconductor wafer to lengthwise and crosswise direction by using a rotating circular diamond blade. However, inferior goods may be made under the influence of several parameters in dicing process such as blade, wafer, cutting water and cutting conditions. Moreover we can not apply this dicing method to a GaN wafer, because the GaN wafer is harder than other wafers such as SiO$_2$, GaAs, GaAsP, and AlGaAs. In order to overcome this problem, development of a new dicing process and determination of dicing parameters are necessary. This paper describes determination of several parameters - scribing depth, scribing force, scriber inclined angle, scribing speed, and factor for scriber replacement - for a new dicing machine using a scriber.

Keywords

References

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