Journal of the Korean Ceramic Society (한국세라믹학회지)

The Korean Ceramic Society (한국세라믹학회)
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Mechanical Damage Behavior of Single Crystalline Silicon by Scratching Test

Scratching Test에 의한 단결정 실리콘의 기계적 손상거동

  • 김현호 (연세대학교 세라믹공학과) ;
  • 정성민 (연세대학교 세라믹공학과) ;
  • 이홍림 (연세대학교 세라믹공학과)
  • Published : 2003.01.01
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Abstract

COF(Coefficient Of Friction), AE(Acoustic Emission), micro-cracks and crystal structure of the single crystalline silicon were investigated according to the induced normal load during scratching test. Scratching tests were performed with the loading rate of 100 N/min and various scratching speeds of 1, 3, 6, 10 mm/min from 0 up to 30 N of the maximum normal load. In consequence, COF, AE and crack density were observed to increase with increasing normal load or increasing scratching speed. Phase transformations from the silicon diamond structure to other structures were observed in the scratched grooves for the slow scratching speeds using micro-Raman spectroscopy.

스크래칭 시험(scratching test)을 이용하여 단결정 실리콘의 수직하중에 대한 마찰계수, AE(Acoustic Emission) 신호와 긁힌 자취의 미세균열을 관찰하고 그 결정구조를 분석하였다. 스크래칭 시험은 하중인가속도(loading rate)를 100N/min으로 하고 스크래칭 속도(scratching speed)를 1, 3, 6, 10mm/min의 4가지로 하여 최대 30N이 될 때까지 행하였다. 그 결과, 수직하중 또는 스크래칭 속도가 증가할 때 마찰계수, AE, 균열밀도는 증가하는 경향을 나타내었다. 스크래칭, 자취에 대한 마이크로 라만 분광법을 이용한 결정구조 분석결과, 스크래칭 속도가 느린 조건에서 압력인가에 따른 실리콘의 다이아몬드 구조에서 다른 고압상의 구조로의 상전이 현상을 관찰할 수 있었다.

Keywords

References

  1. J. Am. Ceram. Soc. v.78 no.8 Origins of the Ductile Regime in Singlepoint Diamond Turning of Semiconductors J. C. Morris;D. L. Callahan;J. Kulik;J. A. Patten;R. O. Scattergood https://doi.org/10.1111/j.1151-2916.1995.tb08612.x
  2. Semicon. Sci. Tech. v.16 Raman Microspectrocsopy Analysis of Pressure-induced Metallization in Scratching of Silicon Y. Gogotsi;G. Zhou;S. S. Ku;S. Cetinkunt https://doi.org/10.1088/0268-1242/16/5/311
  3. Jpn. J. Appl. Phys. Phase Transformation of Single Crystalline Silicon by Scratching S. M. Jeong;H. S. Oh;S. E. Park;H. L. Lee
  4. J. Am. Ceram. Soc. v.73 no.10 Crystal Orientation Dependence of Machining Demage-a Stress Model W. S. Blackley;R. O. Scattergood https://doi.org/10.1111/j.1151-2916.1990.tb06730.x
  5. J. Mater. Sci. v.28 no.14 Plastic Deformation of Silicon During Contact Sliding at Ambient Temperature D. E. Kim;N. P. Suh https://doi.org/10.1007/BF00353197
  6. Semicon. Sci. Tech. v.7 Surface Damage in Nanomachined Silicon K. E. Puttick;C. Jeynes;M. Rudman;A. E. Gee;C. L. Chao https://doi.org/10.1088/0268-1242/7/2/013
  7. Tribology Issues and Opportunities in MEMS Y. Gogotsi;M. S. Rosenberg;A. Kailer;K. G. Nickel;B. Bhushan(ed.)
  8. Semicon. Sci. Tech. v.9 The Surface of Machined Silicon Wafer: a Raman Spectroscopic Study J. Verhey;U. Bismayer;B. Guttler;H. Lundt https://doi.org/10.1088/0268-1242/9/4/012
  9. Appl. Spectrosc. v.51 no.9 Stress and Structural Images of Microindented Silicon by Raman Microscopy M. Bowden;D. J. Gardiner https://doi.org/10.1366/0003702971942123
  10. J. Appl. Phys. v.82 no.5 Determination of Unknown Stress States in Silicon Wafers Using Microlaser Raman Spectroscopy S. Narayanan;S. R. Kalidindi;L. S. Schadler https://doi.org/10.1063/1.366072
  11. J. Appl. Phys. v.64 no.6 Comprehensive Investigation of Polish-induced Surface Strain in <100> and <111> GaAs and InP Z. Hang;H. Shen;F. H. Pollack https://doi.org/10.1063/1.341542
  12. Kor. J. Crystallography v.12 no.2 Phase Transition of Single Crystal Silicon by Scratching Test H. S. Oh;S. M. Jeong;H. H. Kim;S. E. Park;H. L. Lee
  13. The Feynman Lectures on Physics v.1 R. P. Feynman;R. P. Leighton;M. Sands
  14. Surf. Coat. Tech. v.116-119 Acoustic Emission Monitoring of Single Cracking Events and Associated Damage Mechanism Analysis in Indentation and Scratch Testing J. von Stebut;F. Lapostolle;M. Bucsa;H. Vallen https://doi.org/10.1016/S0257-8972(99)00211-X
  15. properties of Crystalline Silicon, EMIS Data reviews Series No. 20 High Pressure Phases of c-Si A. George;Robert Hull(ed.)