Journal of the Korean Crystal Growth and Crystal Technology (한국결정성장학회지)

The Korea Association of Crystal Growth (한국결정성장학회)
권호 표지

Synthesis and characterization of GaN nanoparticles by pulsed laser deposition

펄스레이저증착법에 의한 GaN 나노입자의 합성 및 특성분석

  • 노정현 (한양대학교 세라믹공정연구센터, 세라믹공학과) ;
  • 심승환 (한양대학교 세라믹공정연구센터, 세라믹공학과) ;
  • 윤종원 ;
  • ;
  • 박용주 (한국과학기술연구원, 반도체재료연구실) ;
  • 심광보 (한양대학교 세라믹공정연구센터, 세라믹공학과)
  • Published : 2003.04.01
Download PDF
⟨ Previous Next ⟩

Abstract

GaN nanoparticles were synthesized by the pulsed laser deposition (PLD) process on $SiO_2$substrate after irradiating the surface of the GaN sintered pellet by the ArF (193 nm) excimer laser. At this moment Ar gas pressure of 100 Pa, 50 Pa, 10 Pa and 1 Pa were applied during the ablation process and laser power of 100 mJ and 200 mJ were also applied. The synthesized fan nanoparticles were characterized by XRD, SEM, TEM, XPS and optical absorption spectra. The synthesized GaN nanoparticles had the crystallite sizes of 20~30 nm, and besides, GaN nanoparticles synthesized under low Ar gas pressure compared to the others corresponded with stoichiometry, and the optical band edge of the GaN nanoparticles was blueshifted.

ArF(193nm) 엑시머 레이저를 이용한 펄스레이저증착법(PLD)에 의해 GaN 소결체를 타겟 재료로 하여 $SiO_2$기판위에 GaN nanoparticles를 합성하였다. PLD 공정 중에는 100Pa, 50Pa, 10Pa및 1 Pa의 Ar gas 압력과 100mJ 및 200mJ의 레이저 에너지를 가하였다. 합성된 GaN nanoparticles는 XRD, SEM, TEM, XPS 및 optical absorption spectra 등에 의해 분석되었다. 합성된 GaN nanoparticles는 대체적으로 20~30nm의 입경을 갖는 균일한 분포를 하고 있었다. 또한, Ar 기체 압력이 낮아짐에 따라 합성된 GaN nanoparticles의 stoichiometry가 향상되고 optical band edge가 blueshift 경향을 나타내었다.

Keywords

References

  1. Jpn. J. Appl. Phys. v.34 Hogh-brighness InGaN blue, green and yellow lightemitting diodes with quantum well structures S. Nakamura;M. Senoh;N> Iwasa;S. Nagahama https://doi.org/10.1143/JJAP.34.L797
  2. Appl. Phys. Lett. v.69 High treansconductance heterostructure field-effect transistors based on AlGaN/GaN Q. Chen;M.A. Khan;J.W. Wang;C.J. Sun;M.S. Shur;H. Park https://doi.org/10.1063/1.117894
  3. J. Crystal Growth v.173 Plasma-excited organometallic vapor phase epitaxy of GaN on (0 0 0 1)sapphire T. Tokuda;A. Wakahara;S. Noda;A. Sasaki https://doi.org/10.1016/S0022-0248(96)01045-7
  4. J. Crystal Growth v.170 MOVPE : Is there any other technology for optoelectronics R.L. Moon https://doi.org/10.1016/S0022-0248(96)00731-2
  5. MRS Interner J. Nitride Semicond Res. v.3 Current status of GaN crystal growth by sublimation sandwich technique P.G. Baranov;E.N. Mokhov;A.O. Ostroumov;M.G. Ramm;M.S. Ramm;V.V. rainikov;A.D. Roenkov;Yu.A. Vodakov;A.A. Wolfson;G.V. Saparin;S. Yu;Karpov;D.V. Zimina;yu, N.;Makarov;Holger Juergensen https://doi.org/10.1557/S1092578300001228
  6. J. Crystal Growth v.99 Growth of single crystal GaN subsrate using hydride vapor phase epitazy K. Naniwae;S. Itoh;H. Amano;K. Itoh;K. Hiramarsu;I. Akasaki https://doi.org/10.1016/0022-0248(90)90548-Y
  7. Adv. Marter v.11 Synthesis of photonic crystals for optica lwavelengrhts from semiconductor quantum dots Yu, A. Vlasov;A. Yao;D.J. Norris https://doi.org/10.1002/(SICI)1521-4095(199902)11:2<165::AID-ADMA165>3.0.CO;2-3
  8. Appl. Phys. Lett. v.70 Synthesis of gallium nitide quantum dots through reactive laser ablation T.J. Goodwin;V.J. Leppert;S.H. Risbud;I.M. Kennedy;H.W.H. Lee https://doi.org/10.1063/1.119109
  9. Chem. Phys. Lett. v.351 Gallium nitride synthesis from sodium nitride axide using iodine as a heat sink and diluent J.Q. Hu;B. Deng;W.X. Zhang;K.B. Tang;Y.T. Qian https://doi.org/10.1016/S0009-2614(01)01393-8
  10. Scripta mater v.44 Ambient gas effects on iron oxide particle aggreated films prepared by laser ablation L. Zbroniec;T. Sasaki;N. Koshizaki https://doi.org/10.1016/S1359-6462(01)00735-7
  11. J. Crystal Growth v.237 The effect of merallic catalysts on the synthesis of GaN micro-crystals C.H. Roh;Y.J. Park;E.K. Kom;K.B. Shim https://doi.org/10.1016/S0022-0248(01)02080-2
  12. Appl. Phys. Lett. v.69 Synthesis of nanocrystalline gallium nitridein silica aerogels T.J. Goodwin;V.J. Lepert;C.A. Smith;S.H. Risbud;M. Niemeyer;P.P. Power;H.W.H lee;L.W. Hrubech https://doi.org/10.1063/1.118019
  13. JCPDS card No. 02-1078
  14. J. Appl. Phys. v.73 Effects of crystallization of structural and dielectric properties of thin amorphous films of (1-X)$BaTiO_{3-X}SrTiO_3$(x=0-0.5, 1.0) H. Kawano;K. Morri;Y. Nakayama https://doi.org/10.1063/1.353788
  15. Phys. Soild State v.39 Investigation of physical properties of bulk galium nitride single crystals V.A. Ivantsov;V.A. Sukhoveev;V.I. Nikolaev;I.P. Nikitina;V.A. Dmitriev https://doi.org/10.1134/1.1129964
  16. Appl/ Phys. Lett. v.72 Observation of quantum confinee escited states of GaN nanocrystals V>J. Leppert;C.J. Zahng;H.W.H. Lee;I.M. kennedy;S.H. Risbud https://doi.org/10.1063/1.121532