한국세라믹학회지 (Journal of the Korean Ceramic Society)

  • 제40권9호
  • /
  • Pages.886-890
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  • 2003
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  • 1229-7801(pISSN)
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  • 2234-0491(eISSN)
한국세라믹학회 (The Korean Ceramic Society)
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Helicon Wave Plasma에 의해 식각된 단결정 LiNbO3의 표면 형상 및 특성

Surface Morphology and Characteristics of LiNbO3 Single Crystal by Helicon Wave Plasma Etching

  • 박우정 (성균관대학교 신소재공학과) ;
  • 양우석 (전자부품연구원 광부품센터) ;
  • 이한영 (전자부품연구원 광부품센터) ;
  • 윤대호 (성균관대학교 신소재공학과)
  • 발행 : 2003.09.01
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초록

단결정 LiNbO$_3$를 helicon wave plasma 방법으로 식각시 bias power와 CF$_4$, HBr, SR$_{6}$가 혼합된 gas 유량에 따른 식각 속도와 rms roughness 값의 특성을 관찰하였다. 식각된 깊이는 surface profiler로 관찰하였으며 rms roughness 값은 Atomic Force Microscopy (AFM)으로 측정하였다. Bias power 증가함에 따라 500W에서 가장 높은 식각 속도와 가장 평탄한 표면형상을 얻을 수 있었으며, CF$_4$, HBr, SF$_{6}$ gas 유량을 각각 10～30 sccm으로 증가시킴에 따라 식각 속도는 CF$_4$, HBr, SF$_{6}$ gas 유량이 10 sccm, 30 sccm, 10 sccm에서 가장 높게 나타났으며, rms roughness 값은 CF$_4$, HBr, SF$_{6}$ gas 유량이 30 sccm, 10 sccm, 30 sccm에서 가장 낮은 표면 조도를 나타내었다.

The etching characteristics of a LiNbO$_3$ single crystal have been investigated using helicon wave plasma source with bias power and the mixture of CF$_4$, HBr, SF$_{6}$ gas parameters. The etching rate of LiNbO$_3$ with etching parameters was evaluated by surface profiler. The etching surface was evaluated by Atomic Force Microscopy (AFM). The surface morphology of the etched LiNbO$_3$ changed with bias power and the mixture of CF$_4$/Ar/Cl$_2$, HBr/Ar/Cl$_2$, and SF$_{6}$/Ar/Cl$_2$ parameters. Optimum etching conditions, considering both the surface flatness and etch rate were determined.

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참고문헌

  1. Appl. Phys. Lett. v.50 Optical Iintensity Modulation to 40 GHz Using a Waveguide Electro-optic Switch S.K.Koroty;G.Eisentein;R.S.Tucker;J.J.Veselka;G.Raybon https://doi.org/10.1063/1.97750
  2. J. Lightwave Tech. v.12 Velocity-matching in Millimeter wave Integrated Optic Modulators with Periodic Electrodes J.H.Scraffuer;R.R.Hayes https://doi.org/10.1109/50.285333
  3. Appl. Phys. Lett. v.26 Low-threshold Room-temperature Double-heterostructure $GaAs_{1x}Sb_x/Al_yGa_{1y}As_{1x}Sb_x$ Injection Lasers at 1-μm Wavelengths W.E.Martin https://doi.org/10.1063/1.87992
  4. IEEE J. Quant. Electron. v.27 Integrated Optic Devices Based on Nonlinear Optical Polymers E.Van Tomme;P.P.Van Daele;R.G.Baets;P.E.Lagasse https://doi.org/10.1109/3.81389
  5. Appl. Phys. Lett. v.58 20 GHz Electro-optic Polymer Mach-Zehnder Modulator D.G.Girton;S.L.Kwiatkowski;G.F.Lipscomb;R.S.Lytel https://doi.org/10.1063/1.105123
  6. Appl. Phys. Lett. v.60 Traveling-wave Polymeric Optical Intensity Modulator with More than 40GHz of 3-dB Electrical Bandwidth C.C.Teng https://doi.org/10.1063/1.107482
  7. Appl. Phys. Lett. v.58 Complementary Optical Tap Fabricated in an Electro-optic Polymer Waveguide E.VanTomme;P.P.Van Daele;R.G.Baets;G.F.Lipscomb
  8. Trans. ICICE v.76 B no.Ⅱ Sensitivity Improvement of Electric Field Sensor with LiNbO₃Electro-optic Crystals by Loading Inductance K.Tajima;N.Kuwabara;F.Amemiya;R.Kobayashi
  9. Tech. Digest 13 th Sensor Symp. K.Nishikawa;S.Furuichi
  10. IEEE Trans. Micro. wave Theory Tech. v.43 Design of Ultra-Board-Band LiNbO₃Optical Modulators with Ridge Structure O.Mitomi;K.Noguchi;H.Miyazawa https://doi.org/10.1109/22.414565
  11. Scence and Tech. Adv. Mater. v.2 Etching Characteristics of LiNbO₃Crystal by Fluorine Gas Plasma Reactive Ion Etching M.Tamuma;S.Yoshikado https://doi.org/10.1016/S1468-6996(01)00138-3
  12. Trans. Elec. and Electronic Mater. v.1 no.3 Investigations on the Etching of Platinum Film Using High Density Inductively Coupled Ar/Cl₂/HBr Plasmas N.H.Kim;C.I.Kim;E.G.Chang
  13. J. Kor. Inst. Electrical and Electronic Mater. Eng. v.13 no.8 Notching Effect during the Etching Undoped Amorphous Silicon Using High Density Cl₂/HBr/O₂Plasma S.B.Yu;N.H.Kim;C.I.Kim;E.G.Chang