Analysis of Phase Noise of High Stable Microwave Phased Locked Oscillator with Gate Voltage Tunning

게이트 전압 제어에 의한 마이크로파 고안정 위상동기발진기의 위상잡음 특성 분석

  • 김성용 (경남대학교 정보통신공학과 전파통신연구실) ;
  • 이영철 (경남대학교 정보통신공학과 전파통신연구실)
  • Published : 2003.10.01

Abstract

In this paper, we design a high stable Ku-band phase-locked dielectric resonant microwave oscillator with the gate voltage controls of p-HEMT. By adapting the nonlinear equivalent elements which affects phase noise of microwave oscillator, we optimize the nonlinear elements of p-HEMT to have low phase noise operation. Using the scattering parameters according to bias voltages, we designed the gate voltage control microwave dielectric resonant oscillator and phase-locked loop circuits is applied to have the high stable operations. Designed microwave oscillator as a local oscillator of digital microwave communication shows that output power is 9.17dBm at 10.75GHz and it's phase noise is -88dBc/Hz at 10KHz offset frequency.

본 논문에서는 pHEMT의 게이트 전압을 제어하여 저 위상잡음과 고 안정 특성을 나타내는 Ku-band위상 동기유전체공진 발진기를 설계하였다. 발진기를 설계에서 위상잡음에 영향을 주는 P-HEMT의 비선형소자를 선정하고 게이트 전압에 따라 최소 위상잡음을 나타내도록 최적화 시켰으며 바이어스에 따른 산란계수를 이용하여 전압제어 마이크로파 발진기를 설계한 후 안정특성을 위하여 위상동기회로를 적용하였다. 디지털마이크로파 통신시스템에 이용되는 10.75GHz의 주파수에서 동작되는 고안정 위상동기발진기는 전치분주기 형태로 제작하였으며 설계된 마이크로파 발진기는 9.17dBm 출력전력과 -88 dBc/Hz @10KHz의 위상잡음 특성을 나타내었다.

Keywords

References

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