Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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Fabrication of the Diffusion Barrier for Bus Electrode of Plasma Display by Electroless Ni-B Plating

무전해 Ni-B 도금을 이용한 플라즈마 디스플레이 버스 전극의 확산 방지막 제조

  • Choi, Jae-Woong (Div. Of Materials Science and Engineering, Hanyang Univ.) ;
  • Hong, Seok-Jun (Div. Of Materials Science and Engineering, Hanyang Univ.) ;
  • Lee, Hee-Yeol (Div. Of Materials Science and Engineering, Hanyang Univ.) ;
  • Kang, Sung-Goon (Div. Of Materials Science and Engineering, Hanyang Univ.)
  • 최재웅 (한양대학교 신소재공학부) ;
  • 홍석준 (한양대학교 신소재공학부) ;
  • 이희열 (한양대학교 신소재공학부) ;
  • 강성군 (한양대학교 신소재공학부)
  • Published : 2003.02.01
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Abstract

In this study, we have investigated the availability of the electroless Ni-B plating for a diffusion barrier of the bus electrode. The Ni-B layer of 1$\beta$: thick was electroless deposited on the electroplated Cu bus electrode for AC plasma display. The layer was to encapsulate Cu bus electrode to prevent from its oxidation and to serve as a diffusion barrier against Cu contamination of the transparent dielectric layer in AC plasma display. The microstructure of the as-plated barrier layer was made of an amorphous phase and the structure was converted to crystalline at about 30$0^{\circ}C$. The concentration of boron was about 5∼6 wt.% in the electroless Ni-B deposit regardless of DMAB concentration. The electroless Ni-B deposit was coated on the surface of the electroplated Cu bus electrode uniformly. And the electroless Ni-B plating was found to be an appropriate process to form the diffusion barrier.

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