Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
권호 표지
DOI QR코드

DOI QR Code

Effects of Thermal Annealing on the Properties of Amorphous Carbon Nitride Films Deposited by PECVD

PECVD로 제조된 비정질 질화탄소 박막의 물성에 미치는 열처리 효과

  • Moon, Hyung-Mo (Dept. of Materials Science and Metallurgical Engineering, Sunchon National University) ;
  • Kim, Sang-Sub (Photonic and Electronic Thin Film Laboratory, Dept. of Materials Science and Engineering, Chonnam National University)
  • 문형모 (순천대학교 재료ㆍ금속공학과) ;
  • 김상섭 (전남대학교 신소재공학부 광ㆍ전자박막연구실)
  • Published : 2003.05.01
Download PDF
⟨ Previous Next ⟩

Abstract

Amorphous carbon nitride films deposited on Si(001) substrates by a plasma enhanced chemical vapor deposition (PECVD) technique using CH$_4$and $N_2$as reaction gases were thermally annealed at various temperatures under$ N_2$atmosphere, then their physical properties were investigated particularly as a function of annealing temperature. Above $600^{\circ}C$ a small amount of crystalline $\beta$-$C_3$$N_4$ phase evolves, while the film surface becomes very rough due to agglomeration of fine grains on the surface. As the annealing temperature increases, both the hardness and the $sp^3$ bonding nature are enhanced. In contrast to our expectation, higher annealing temperature results in a relatively higher friction mainly due to big increase in roughness at that temperature.

Keywords

References

  1. A. Y. Liu and M. L. Cohen, Science, 245, 841 (1989) https://doi.org/10.1126/science.245.4920.841
  2. F. Alvarez, N. M. Victoria and P. Hammer, Appl. Phys. Lett., 73, 1065 (1998) https://doi.org/10.1063/1.122115
  3. L. C. Chen, C. K. Chen and S. L. Wei, Appl. Phys. Lett., 72, 3449 (1998) https://doi.org/10.1063/1.121662
  4. Y. F. Lu, Z. F. He and Z. M. Ren, J. Appl. Phys., 86, 5417 (1999) https://doi.org/10.1063/1.371540
  5. S. Bhattacharyya, A. Granier and G. Turban, J. Appl. Phys., 86, 4668 (1999) https://doi.org/10.1063/1.371419
  6. X. A. Zhao, C. W. Ong, Y. C. Tsang, Y. W. Wong, P. W. Chan and C. L. Choy, Appl. Phys. Lett., 66, 2562 (1995) https://doi.org/10.1063/1.113114
  7. M. Friedrich, T. Welzei, R. Rochotzki and H. Kupfer, Diamond Relat. Mater., 6, 33 (1997) https://doi.org/10.1016/S0925-9635(96)00594-8
  8. N. Hellgren, M. P. Johansson, E. Broitman and J. E. Sundgren, Phys. Rev., Phys. Rev., 5162 (1999) https://doi.org/10.1103/PhysRevB.59.5162
  9. C. Niu, Y. Z. Lu and C. M. Lieber, Science, 261, 334 (1999) https://doi.org/10.1126/science.261.5119.334
  10. Y. Aoi, K. Ono and E. Kamijo, J. Appl. Phys., 86, 2318 (1999) https://doi.org/10.1063/1.371048
  11. Z. J. Zhang, S. Fan, J. Huang and C. M. Lieber, Appl. Phys. Lett., 68, 2639 (1996) https://doi.org/10.1063/1.116317
  12. C. Jama and C. M. Bulier, Thin Solid Films, 302, 58 (1997) https://doi.org/10.1016/S0040-6090(96)09541-7
  13. P. Merel and J. Harman, Appl. Phys. Lett., 71, 3814 (1997) https://doi.org/10.1063/1.120513
  14. M. Zhang, L. Pan and Y. Nakayama, J. Noncryst. Sol., 266, 815 (2000) https://doi.org/10.1016/S0022-3093(99)00849-2
  15. J. L. He and W. L. Chang, Surf. and Coat. Technol., 99, 184 (1998) https://doi.org/10.1016/S0257-8972(97)00526-4
  16. M. Zhang, Y. Nakayama, T. Miyazaki and M. Kume, J. Appl. Phys., 85, 2904 (1999) https://doi.org/10.1063/1.369055
  17. N. Mutsukura and K. Akita, Diamond Relat. Mater., 8, 1720 (1999) https://doi.org/10.1016/S0925-9635(99)00032-1
  18. H. M. Moon and S. S. Kim, K. J. Mater. Res., in press
  19. S. Matsumoto, E. Q. Xie and F. Izumi, Diamond Relat. Mater., 8, 1175 (1999) https://doi.org/10.1016/S0925-9635(99)00103-X
  20. S. F. Lim, A. T. S. Wee, J. Lin and D. H. C. Chua, Surf. Interface Anal., 28, 212 (1999) https://doi.org/10.1002/(SICI)1096-9918(199908)28:1<212::AID-SIA579>3.0.CO;2-M
  21. W. Yu, G. B. Ren, S. F. Wang, L. Han, X. W. Li, L. S. Zhang and G. S. Fu, Thin Solid Films, 402, 55 (2002) https://doi.org/10.1016/S0040-6090(01)01679-0
  22. S. Muhl and J. M .Mendez, Diamond Relat. Mater., 8, 1809 (1999) https://doi.org/10.1016/S0925-9635(99)00142-9
  23. M. Tabbal, P. Merel, M. Chaker, M. A. E. Khakani, E. G. Herbert, B. N. Lucas and M. E. Ohern, J. Appl. Phys., 85, 3860 (1999) https://doi.org/10.1063/1.369757
  24. Z. Y. Chen, J. P. Zhao, T. Yano, T. Ooie and M. Yoneda, J. Sakakibara, J. Appl. Phys., 88, 7060 (2000) https://doi.org/10.1063/1.1326474
  25. J. wei, P. Hing and Z. Q. Mo, Wear, 225-229, 1141 (1999) https://doi.org/10.1016/S0043-1648(98)00394-9