References
- IEEE Electron Device Letters v.23 Highly reliable ferroelectric memories using BLT thin films and robust integration schemes B. Yang;Y.M. Kang;S.S. Lee;K.H. Noh;S.W. Lee;N.K. Kim;S.Y. Kweon;S.J. Yeom;Y.J. Park
- Jpn. J. Appl. Phys. v.42 Ferroelectric memories using randomly oriented BLT films B. Yang;Y.M. Kang;S.S. Lee;K.H. Noh;S.W. Lee;N.K. Kim;S.Y. Kweon;S.J. Yeom;Y.J. Park
- Int. Electron Device Meet. Tech. Dig. v.791 Highly reliable 1Mbit ferroelectric memories with newly developed BLT thin films and steady integration schemes B. Yang;Y.M. Kang;S.S. Lee;K.H. Noh;N.K. Kim;S.Y. Kweon;S.J. Yeom;N.S. Kang;H.G. Yoon
- Nature v.401 Lanthanum-substituted bismuth titanate for use in non-volatile memories B.H. Park;B.S. Kang(et al.)
- Appl. Phys. Lett. v.80 T. KIojima;T. Sakai(et al.)
- Jpn. J. Appl. Phys. v.42 T. Hayashi;N. Iizawa(et al.)
- Materials Science and Engineering v.A257 S.I. Wright;D.P. Field
- Materials Science and Engineering v.A160 S.I. Wright;B.L. Adams;K. Kunze
- Materials Science Forum v.408 C.A. Michaluk;D.P. Field;K.A. Nibur;S.I. Wright;R.A. Witt
- Materials Science Forum v.426 D.P. Field;S.I. Wright;P. Trivedi
- Materials Science Forum v.426 S.I. Wright;D.P. Field;M. Nowell
- Appl. Phys. Lett. v.71 Nanoscale imaging of domain dynamics and retention in ferroelectric thin films A. Gruverman;H. Tokumoto;A.S. Prakash;S. Aggarwal;B. Yang;M. Wuttig;R. Ramesh;O. Auciello;T. Venkatesan
-
Appl. Phys. Lett.
v.80
Depolarizing-field-mediated 180
${\circ}$ switching in ferroelectric thin films with 90${\circ}$ domains A. Roelofs;N.A. Pertsev;R. Waser;F. Schlaphof;L.M. Eng;C. Ganpule;V. Nagarajan;R. Ramesh - J. Appl. Phys. v.91 Imaging three-dimensional polarization in epitaxial polydomain ferroelectric thin films C.S. Ganpule;V. Nagarajan;B.K. Hill;A.L. Roytburd;E.D. Williams;R. Ramesh;S.P. Alpay;A. Roelofs;R. Waser;L.M. Eng
- Appl. Phys. Lett. v.80 Nanoscale imaging of domains and domain walls in periodically poled ferroelectrics using atomic force microscopy J. Wittborn;C. Canalias;K.V. Rao;R. Clemens;H. Karlsson;F. Laurell
-
Phys. Rev. B
v.65
Polarization relaxation kinetics and 180
${\circ}$ domain wall dynamics in ferroelectric thin films C.S Ganpule;A.L. Roytburd;V. Nagarajan;B.K. Hill;S.B. Ogale;E.D. Williams;R. Ramesh;J.F. Scott; - Appl. Phys. Lett. v.78 Asymmetric nanoscale switching in ferroelectric thin films by scanning force microscopy A. Gruverman;A. Kholkin;A. Kingon;H. Tokumoto
- J. Appl. Phys. v.89 Polarization retention in SBT thin films investigated at nanoscale A. Gruverman;M. Tanaka
- Appl. Phys. Lett. v.76 Nanoscopic switching behavior of epitaxial SBT films deposited by pulsed laser deposition A. Gruverman;A. Pignolet;K. M. Satyalakshmi;M. Alexe;N.D. Zakharov;D. Hesse
- J. Appl. Phys. v.39 S.E. Cummins;L.E. Cross