Transactions of the Korean Society of Mechanical Engineers B (대한기계학회논문집B)

The Korean Society of Mechanical Engineers (대한기계학회)
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A Study on the Reactor Configuration and Thermal Conditions for the Growth of High Quality Thin Film of GaN Layer

고품질 질화물 반도체 박막 성장을 위한 반응로 구조 및 열적 조건에 관한 연구

  • 김진택 (전북대학교 자동차신기술연구센터) ;
  • 백병준 (전북대학교 기계항공시스템공학부, 자동차신기술연구센터) ;
  • 이철로 (전북대학교 신소재공학부) ;
  • 박복춘 (전북대학교 기계항공시스템공학부)
  • Published : 2004.12.01
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Abstract

Numerical calculation has been performed to investigate the transport phenomena in the horizontal reactor which has two different gas inlets for MOCVD(metalorganic chemical vapor deposition). The full elliptic governing equations for continuity, momentum, energy and chemical species are solved by using the commercial code FLUENT. It is investigated how thermal characteristics, reactor geometry, and the operating parameters affect flow fields, mass fraction of each reactants. The numerical simulations demonstrate that flow rate of each species, inlet geometry of the reactor, and its distance from the susceptor as well as the inclination of upper wall of reactor can be used effectively to optimize reactor performance. The commonly used idealized boundary conditions are also investigated to predict flow phenomena in the actual deposition system.

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References

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