Effect of Alternating Magnetic Field on Ion Activation in Low Temperature Polycrystalline Silicon Technology

Statistical design of experiments was successfully employed to investigate the effect of alternating magnetic field on activation of polycrystalline Si (p-Si) doped as n-type using $\textrm{PH}_3$, by full factorial design of three factors with two levels. In this design, the input variables are graphite size, alternating current, and activation time. The output parameter, sheet resistance, is analyzed in terms of the primary effects and multi-factor interactions. Notably, the three-factor interaction is calculated to be a dominant interaction. The interaction between graphite size and activation time and the main effect of current are important effects compared to the other variables and relevant interactions. Alternating magnetic flux activation is proved a significantly beneficial processing technique.