한국재료학회지 (Korean Journal of Materials Research)

  • 제14권6호
  • /
  • Pages.402-406
  • /
  • 2004
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  • 1225-0562(pISSN)
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  • 2287-7258(eISSN)
한국재료학회 (Materials Research Society of Korea)
권호 표지
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WSi2 word-line 및 bit-line용 spacer-Si3N4 박막의 증착

Deposition of Spacer-Si3N4 Thin Film for WSi2 Word-Line and Bit-Line

  • 안승준 (선문대학교 자연과학대학 신소재과학과) ;
  • 김대욱 (선문대학교 자연과학대학 신소재과학과) ;
  • 김종해 (선문대학교 공과대학 전자정보통신공학과) ;
  • 안성준 (선문대학교 공과대학 전자정보통신공학과) ;
  • 김영정 (선문대학교 공과대학 재료공학과) ;
  • 김호섭 (선문대학교 자연과학대학 신소재과학과)
  • Ahn S. (Department of Physics and Advanced Material Science, Sun Moon University) ;
  • Kim D.W. (Department of Physics and Advanced Material Science, Sun Moon University) ;
  • Kim J.H (Division of Electronics, I&C Engineering, Sun Moon University) ;
  • Ahn S.J. (Division of Electronics, I&C Engineering, Sun Moon University) ;
  • Kim Y.J. (Division of Materials Engineering, Sun Moon University) ;
  • Kim H.S. (Department of Physics and Advanced Material Science, Sun Moon University)
  • 발행 : 2004.06.01
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초록

$WSi_2$, $TiSi_2$, $CoSi_2$, and $TaSi_2$ are general silicides used today in semiconductor devices. $WSi_2$ thin films have been proposed, studied and used recently in CMOS technology extensively to reduce sheet resistance of polysilicon and $n^{+}$ region. However, there are several serious problems encountered because $WSi_2$ is oxidized and forms a native oxide layer at the interface between $WSi_2$ and $Si_3$$N_4$. In this study, we have introduced 20 $slm-N_2$ gas from top to bottom of the furnace in order to control native oxide films between $WSi_2$ and $Si_3$$N_4$ film. In resulting SEM photographs, we have observed that the native oxide films at the surface of $WSi_2$ film are removed using the long injector system.

키워드

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