Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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Influence of GaAs/AlGaAs Superlattice Layers on Optical Properties of InAs Quantum Dots

InAs 양자점의 광학적 성질에 미치는 초격자층의 영향

  • 정연길 (인제대학교 대학원 광대역정보통신학과, 나노공학과 나노기술응용연구소) ;
  • 최현광 (인제대학교 대학원 광대역정보통신학과, 나노공학과 나노기술응용연구소) ;
  • 박유미 (인제대학교 대학원 광대역정보통신학과, 나노공학과 나노기술응용연구소) ;
  • 황숙현 (인제대학교 대학원 광대역정보통신학과, 나노공학과 나노기술응용연구소) ;
  • 윤진주 (인제대학교 대학원 광대역정보통신학과, 나노공학과 나노기술응용연구소) ;
  • 이제원 (인제대학교 대학원 광대역정보통신학과, 나노공학과 나노기술응용연구소) ;
  • 임재영 (인제대학교 대학원 광대역정보통신학과, 나노공학과 나노기술응용연구소) ;
  • 전민현 (인제대학교 대학원 광대역정보통신학과, 나노공학과 나노기술응용연구소)
  • Published : 2004.02.01
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Abstract

We investigated the effects of high potential barriers on the optical characteristics of InAs quantum dots (QDs) by using photoluminescence (PL) and photoreflectance (PR) spectroscopy. A sample with regular InAs quantum dots on GaAs was grown by molecular beam epitaxy (MBE) as a reference. Another InAs QDs sample was embedded in single AlGaAs barriers. On the other hand, a sample with GaAs/AlGaAs superlattice barriers was adopted for comparison with a sample with a single AlGaAs layer. In results, we found that the emission wavelength of QDs was effectively tailored by using high potential barriers. Also, it was found that the optical properties of a sample with QDs embedded in GaAs/AlGaAs superlattices were better than those of a sample with QDs embedded in a single layer of AlGaAs barriers. We believe that GaAs/AlGaAs superlattice could effectively prevent the generation of defects.

Keywords

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