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Effect of SiO2 Antireflection Coating on the Si Solar Cell

Si 태양전지에서 SiO2 광반사 방지막의 처리 효과

  • 장지근 (단국대학교 전자컴퓨터학부) ;
  • 임용규 (단국대학교 전자컴퓨터학부) ;
  • 황용운 (단국대학교 전자컴퓨터학부) ;
  • 조재욱 (단국대학교 전자컴퓨터학부)
  • Published : 2004.02.01

Abstract

We have studied the effective optical absorption power of Si solar cell with $SiO_2$-antireflection layer based on a mathematical modelling of AM(air mass)1 spectrum and Si refractive index in the wavelength range(0.4 $\mu\textrm{m}\leq$λ$\leq$$0.97\mu\textrm{m}$). The effective optical absorption power obtained from the theoretical calculation was 450 and 520 W/$\m^2$ for the Si solar cells with $SiO_2$-antireflection layer of 500$\AA$ and 1000$\AA$, respectively. The optimum thickness of $SiO_2$-antireflection layer showing the minimum reflection loss was about 1000$\AA$ in the computer simulation. Two kinds of Si solar cells named EBS(500$\AA$) and EBS(l000$\AA$) were fabricated to evaluate the effect of $SiO_2$-antireflection layer thickness on the optical absorption. The epitaxial base Si cell with $SiO_2$-antireflection layer of 1000$\AA$ [EBS(l000$\AA$)] showed the output power improvement of about 15% upon the EBS(500$\AA$) cell due to larger absorption of effective optical power under illumination of AM1, 1 sun.

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References

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