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Characterization of PMW-PZT Thick Films Prepared by Screen Printing Method

스크린 인쇄법에 의해 제조한 PMW-PZT 후막의 특성

  • Son, Jin-Ho (Department of Materials Science and Engineering, The University of Seoul, KIST) ;
  • Kim, Yong-Bum (Microsystem Research Center, Korea Institute of Science and Technology) ;
  • Cheon, Chae-Il (Department of Materials and Mechanical Engineering, Hoseo University) ;
  • Yoo, Kwang-Soo (Department of Materials Science and Engineering, The University of Seoul) ;
  • Kim, Tae-Song (Microsystem Research Center, Korea Institute of Science and Technology)
  • 손진호 (서울시립대학교 재료공학과, 한국과학기술연구원) ;
  • 김용범 (한국과학기술연구원 마이크로시스템연구센터) ;
  • 천채일 (호서대학교 신소재공학과) ;
  • 유광수 (서울시립대학교 재료공학과) ;
  • 김태송 (한국과학기술연구원 마이크로시스템연구센터)
  • Published : 2004.01.01

Abstract

PMW-PZT thick films of about $30{\mu}m$ thickness were fabricated on Pt/$TiO_2$/$SiN_x$Si substrate by the hybrid method of screen printing and PZT sol application. With the increase of the number of the sol application times, the sintered density and electrical properties of PMW-PZT thick films were evidently increased. For the PMW-PZT thick film with PZT sol application of 10-times, the dielectric constant ($\varepsilon_r$) was 745 at the frequency of 100 KHz and thepiezoelectric coefficient ($d_33$) was 155 pC/N at the applied pressure of 1 atm.

스크린 인쇄법 및 PZT sol 처리의 복합공정을 적용하여 $30{\mu}m$ 두께의 PMW-PZT 후막을 Pt/$TiO_2$/$SiN_x$Si 기판위에 제작하였다. 그 결과 PZT sol 처리 횟수가 증가함에 따라 후막의 소결 밀도가 증가하고 전기적, 압전 특성의 증진되는 것을 관찰할 수 있었다. $800^{\circ}C$에서 소결한 10회 sol 처리한 PMW-PZT 후막은 745의 유전상수 및 155 pC/N의 $d_33$ 값을 나타내었다.

Keywords

References

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