Transactions on Electrical and Electronic Materials

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Molecular Dynamics Simulations of Nanomemory Element Based on Boron Nitride Nanotube-to-peapod Transition

  • Hwang Ho Jung (Nano Electronics and Future Technology Laboratory, Department of Electronic Engineering) ;
  • Kang Jeong Won (Nano Electronics and Future Technology Laboratory, Department of Electronic Engineering) ;
  • Byun Ki Ryang (Nano Electronics and Future Technology Laboratory, Department of Electronic Engineering)
  • Published : 2004.12.01
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Abstract

We investigated a nonvolatile nanomemory element based on boron nitride nanopeapods using molecular dynamics simulations. The studied system was composed of two boron-nitride nanotubes filled Cu electrodes and fully ionized endo-fullerenes. The two boron-nitride nanotubes were placed face to face and the endo-fullerenes came and went between the two boron-nitride nanotubes under alternatively applied force fields. Since the endo-fullerenes encapsulated in the boron-nitride nanotubes hardly escape from the boron-nitride nanotubes, the studied system can be considered to be a nonvolatile memory device. The minimum potential energies of the memory element were found near the fullerenes attached copper electrodes and the activation energy barrier was $3{\cdot}579 eV$. Several switching processes were investigated for external force fields using molecular dynamics simulations. The bit flips were achieved from the external force field of above $3.579 eV/{\AA}$.

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References

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