Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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Characteristics of TiO2 Thin Films Fabricated by R.E, Magnetron Sputtering

R.F Magnetron Sputtering법으로 제조한 TiO2 박막의 특성

  • Chu Y. H. (Research Institute of Advanced Materials Development, Chonbuk National University) ;
  • Choi D. K. (School of Advanced Materials Engineering, Chonbuk National University)
  • 추용호 (전북대학교 신소재개발연구센터) ;
  • 최대규 (전북대학교 공과대학 신소재공학부, 신소재개발연구센터)
  • Published : 2004.11.01
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Abstract

Titanium oxide thin films were prepared on Si(100) substrates by R.F. magnetron reactive sputtering at $30\sim200watt$ R.F power range, and annealed at $600^{\circ}C\sim800^{\circ}C$ for 1 hour. The properties of $TiO_2$ thin films were analyzed using x-ray, ${\alpha}-step$, ellipsometer, scanning electron microscopy, and FT-IR spectrometer. Upon in-situ depositions, the initial phase of $TiO_2$ thin film showed non-crystalline phase at R.F. power $30\sim100$ watt. The crosssection of $TiO_2$ thin films were sbserved to be the columnar structure. With the increasing R.F power and annealing temperature, the grain size, crystallinity, refractive index, and void size of titanium oxides showed a tended to increase. The FT-IR transmittance spectra of titanium oxide thin films have the obsorption band of Ti-O bond, Si-O bond, Si-O-Ti bond and O-H bond. With the increase of R.F. power and annealing temperature, these films have the stronger bond structures. It is considered that such a phenomena is due to phase transition and good crystallinity

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