Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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Stability of Co/Ni Silicide in Metal Contact Dry Etch

Co/Ni 복합실리사이드의 메탈 콘택 건식식각 안정성 연구

  • Song Ohsung (Department of Materials Science and Engineering, The University of Seoul) ;
  • Beom Sungjin (Department of Materials Science and Engineering, The University of Seoul) ;
  • Kim Dugjoong (Department of Materials Science and Engineering, The University of Seoul)
  • 송오성 (서울시립대학교 신소재공학과) ;
  • 범성진 (서울시립대학교 신소재공학과) ;
  • 김득중 (서울시립대학교 신소재공학과)
  • Published : 2004.08.01
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Abstract

Newly developed silicide materials for ULSI should have the appropriate electrical property of low resistant as well as process compatibility in conventional CMOS process. We prepared $NiCoSi_x$ silicides from 15 nm-Co/15 nm-Ni/Si structure and performed contact dry etch process to confirm the dry etch stability and compatibility of $NiCoSi_x$ layers. We dry etched the photoresist/SiO/silicide/silicon patterns with $CF_4\;and\;CHF_3$ gases with varying powers from 100 to 200 W, and pressures from 45 to 65 mTorr, respectively. Polysilicon and silicon active layers without silicide were etched $0\sim316{\AA}$ during over etch time of 3min, while silicon layers with proposed $NiCoSi_x$ silicide were not etched and showed stable surfaces. Our result implies that new $NiCoSi_x$ silicides may replace the conventional silicides due to contact etch process compatibility.

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References

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