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Optimizing the Plasma Deposition Process Parameters of Antistiction Layers Using a DOE (Design of Experiment)

실험 계획법을 이용한 점착방지막용 플라즈마 증착 공정변수의 최적화 연구

  • Cha Nam-Goo (Division of Materials and Chemical Engineering, Micro Biochip Center, Hanyang University) ;
  • Park Chang-Hwa (Division of Materials and Chemical Engineering, Micro Biochip Center, Hanyang University) ;
  • Cho Min-Soo (Division of Materials and Chemical Engineering, Micro Biochip Center, Hanyang University) ;
  • Park Jin-Goo (Division of Materials and Chemical Engineering, Micro Biochip Center, Hanyang University) ;
  • Jeong Jun-Ho (Precision Machining Group, Korea Institute of Machinery & Materials) ;
  • Lee Eung-Sug (Precision Machining Group, Korea Institute of Machinery & Materials)
  • 차남구 (한양대학교 재료화학공학부 마이크로바이오칩센터) ;
  • 박창화 (한양대학교 재료화학공학부 마이크로바이오칩센터) ;
  • 조민수 (한양대학교 재료화학공학부 마이크로바이오칩센터) ;
  • 박진구 (한양대학교 재료화학공학부 마이크로바이오칩센터) ;
  • 정준호 (한국기계연구원 지능형정밀기계연구부) ;
  • 이응숙 (한국기계연구원 지능형정밀기계연구부)
  • Published : 2005.11.01

Abstract

NIL (nanoimprint lithography) technique has demonstrated a high potential for wafer size definition of nanometer as well as micrometer size patterns. During the replication process by NIL, the stiction between the stamp and the polymer is one of major problems. This stiction problem is moi·e important in small sized patterns. An antistiction layer prevents this stiction ana insures a clean demolding process. In this paper, we were using a TCP (transfer coupled plasma) equipment and $C_4F_8$ as a precursor to make a Teflon-like antistiction layer. This antistiction layer was deposited on a 6 inch silicon wafer to have nanometer scale thicknesses. The thickness of deposited antistiction layer was measured by ellipsometry. To optimize the process factor such as table height (TH), substrate temperature (ST), working pressure (WP) and plasma power (PP), we were using a design of experimental (DOE) method. The table of full factorial arrays was set by the 4 factors and 2 levels. Using this table, experiments were organized to achieve 2 responses such as deposition rate and non-uniformity. It was investigated that the main effects and interaction effects between parameters. Deposition rate was in proportion to table height, working pressure and plasma power. Non-uniformity was in proportion to substrate temperature and working pressure. Using a response optimization, we were able to get the optimized deposition condition at desired deposition rate and an experimental deposition rate showed similar results.

Keywords

References

  1. Alternative Lithography, Edited by Clivia M. Sotomayor Torres, Kluwer Academic Publishers (2003)
  2. S. Y. Chou, P. R. Krauss and P. J. Renstrom, Appl. Phys. Lett, 67, 3114 (1995) https://doi.org/10.1063/1.114851
  3. H. Becker and U. Heim, Sensors and Actuators, 83, 130 (2000) https://doi.org/10.1016/S0924-4247(00)00296-X
  4. R.W. Jaszewski, H. Schift, B. Schnyder, A. Schneuwly and P. Groning, Applied Surface Science, 143, 301 (1999) https://doi.org/10.1016/S0169-4332(99)00014-8
  5. M. Beck, M. Graczyk, I. Maximov, E. L. Sarwe, T. G I. Ling, M. Keil and L. Montelius, Microelectronic Engineering, 61, 441 (2002) https://doi.org/10.1016/S0167-9317(02)00464-1
  6. K. K. Lee, N. G. Cha, J. S. Kim, J. G. Park and H. J. Shin, Thin Solid Films, 377, 727 (2000) https://doi.org/10.1016/S0040-6090(00)01288-8
  7. Y. Matsumoto, K. Yoshida and M. Ishida, Sensors and Actuators, 66, 308 (1998) https://doi.org/10.1016/S0924-4247(97)01763-9
  8. Y. Matsumoto and M. Ishida, Sensors and Actuators, 83, 179 (2000) https://doi.org/10.1016/S0924-4247(99)00396-9
  9. J. F. Li, H. L. Liao, C. X. Ding and C. Coddet, Journal of Materials Processing Technology, 160, 34 (2005) https://doi.org/10.1016/j.jmatprotec.2004.02.039
  10. K. Takahashi, A. Itoh, T. Nakamura and K. Tachibana, Thin Solid Films, 374, 303 (2000) https://doi.org/10.1016/S0040-6090(00)01160-3
  11. N. G Cha, I. K. Kim, C. H. Park, H. W. Lim and J. G. Park, Korean Journal of materials Research, 15, 149 (2005) https://doi.org/10.3740/MRSK.2005.15.3.149
  12. C. Q. Jiao, A. Garscadden and P. D. Haaland, Chemical Physics Letters, 297, 121 (1998) https://doi.org/10.1016/S0009-2614(98)01107-5
  13. L. Sandrin, M. S. Silverstein and E. Sacher, Polymer, 42, 3761 (2001) https://doi.org/10.1016/S0032-3861(00)00693-5
  14. K. P. Ningel, D. Theirich and J. Engernann, Surface and Coating Technology, 98, 1142 (1998) https://doi.org/10.1016/S0257-8972(97)00147-3
  15. P. R. Charani and J. M. Rovshandeh, Bioresource Technology, 96, 1658 (2005) https://doi.org/10.1016/j.biortech.2004.12.030
  16. M. H. Choi, N. H. Kim, S. Y. Kim and E. G. Chang, Journal of the Korean Institute of Electrical and Electronic Material Engineers, 18, 24 (2005) https://doi.org/10.4313/JKEM.2005.18.1.024
  17. J. H. Kim and K. H. Chung, Journal of the Korean Physical Society, 47, 249 (2005)