Preparation of ITO Transparent Conductive thin film for Display at Room Temperature

디스플레이용 ITO 투명전도막의 저온 제작

  • Kim Kyung-Hwan (Kyungwon Univ. Dept. of Electric & Information Engineering) ;
  • Kim Hyun-Woong (Kyungwon Univ. Dept. of Electric & Information Engineering)
  • 김경환 (경원대학교 전기정보공학과) ;
  • 김현웅 (경원대학교 전기정보공학과)
  • Published : 2005.12.01

Abstract

In this study, we prepared the ITO thin film for TOLED(Top-emitting OLED) or flexible display at room temperature using the FTS(Facing Targets Sputtering Apparatus). We observed characteristics of deposited thin films as a function of sputtering conditions. XRD patterns were independence trom oxygen gas flow and input current. But electrical and optical properties were strongly dependence. In the results, we could prepare good properties of ITO thin films resistivity of $4.27X10^{-4}[\Omega-cm]$, transmittance of over 80% at working gas pressure 1[mTorr], input current 0.6[A], oxygen gas ratio 0.3[sccm], at room temperature.

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