Journal of the Semiconductor & Display Technology (반도체디스플레이기술학회지)

The Korean Society Of Semiconductor & Display Technology (한국반도체디스플레이기술학회)
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Effect of Growth Temperature on the Properties of ZnO Films Grown by MOCVD

MOCVD로 제작한 ZnO의 성장온도에 따른 특성 변화

  • Seo Hyun-Seok (Department of Electrical and Computer Engineering, Ajou University) ;
  • Jeong Eui-Hyuk (Department of Electrical and Computer Engineering, Ajou University) ;
  • Jo Jung-Yol (Department of Electrical and Computer Engineering, Ajou University) ;
  • Choi Yearn-Ik (Department of Electrical and Computer Engineering, Ajou University) ;
  • Seo O-Gweon (Samsung Advanced Institute of Technology, NFC)
  • 서현석 (아주대학교 정보통신대학 전자공학부) ;
  • 정의혁 (아주대학교 정보통신대학 전자공학부) ;
  • 조중열 (아주대학교 정보통신대학 전자공학부) ;
  • 최연익 (아주대학교 정보통신대학 전자공학부) ;
  • 서오권 (삼성 종합기술원 NFC)
  • Published : 2005.12.01
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Abstract

Characteristics of ZnO films grown on $Si-SiO_2$ substrates at temperatures of $200\sim400^{\circ}C$ by metalorganic chemical vapor deposition were investigated. The growth rates and mobilities of ZnO films were dependent on growth temperatures. The field-effect mobilities measured in thin-film transistor structure were $15cm^2/Vsec$.

Keywords