Journal of Magnetics

The Korean Magnetics Society (한국자기학회)
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Ferromagnetism and Anomalous Hall Effect in p-Zn0.99Mn0.01O:P

  • Kim, Hyun-Jung (Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology) ;
  • Sim, Jae-Ho (Department of Materials Science and Engineering, Chungnam National University) ;
  • Kim, Hyo-Jin (Department of Materials Science and Engineering, Chungnam National University) ;
  • Hong, Soon-Ku (Department of Materials Science and Engineering, Chungnam National University) ;
  • Kim, Do-Jin (Department of Materials Science and Engineering, Chungnam National University) ;
  • Ihm, Young-Eon (Department of Materials Science and Engineering, Chungnam National University) ;
  • Choo, Woong-Kil (Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology)
  • Published : 2005.09.01
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Abstract

We report hole-induced ferromagnetism in diluted magnetic semiconductor $Zn_{0.99}Mn_{0.01}$ films grown on $SiO_2/Si$ substrates by reactive sputtering. The p-type conduction with hole concentration over $10^{18}\;cm^{-3}$ is achieved by P doping followed by rapid thermal annealing at $800^{\circ}C$ in a $N_2$ atmosphere. The p-type $Zn_{0.99}Mn_{0.01}O:P$ is carefully examined by x-ray diffraction and transmission electron microscopy. The magnetic measurements for $p-Zn_{0.99}Mn_{0.01}O:P$ clearly reveal ferromagnetic characteristics with a Curie temperature above room temperature, whereas those for $n-Zn_{0.99}Mn_{0.01}O:P$ show paramagnetic behavior. The anomalous Hall effect at room temperature is observed for the p-type film. This result strongly supports hole-induced room temperature ferromagnetism in $p-Zn_{0.99}Mn_{0.01}O:P$.

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References

  1. H. Ohno, J. Magn. Magn, Mater. 200, 110 (1999)
  2. G. T. Thaler, M. E. Overberg, B. Gila, R. Frazier, C. R. Abernathy, S. J. Pearton, J. S. Lee, S. Y. Lee, Y. D. Park, Z. G. Khim, J. Kim, and F. Ren, Appl. Phys. Lett. 80, 3964 (2002)
  3. S. Ramchandran, A. Tiwari, and J. Narayan, Appl. Phys. Lett. 84, 5255 (2004) https://doi.org/10.1063/1.1637949
  4. P. Sharma, A. Gupta, K. V. Rao, F. J. Owens, R. Sharma, R. Ahuja, J. M. Osorio Guillen, B. Johansson, and G. A. Gehring, Nature Materials 2, 673 (2003) https://doi.org/10.1038/nmat778
  5. H. Toyosaki, T. Fukumura, Y. Yamada, K. Nakajima, T. Chikyow, T. Hasegawa, H. Koinuma, and M. Kawsaki, Nature Materials 3, 221 (2004)
  6. T. Dietl, H. Ohno, F. Matsukura, J. Cibert, and D. ferrand, Science 287, 1019 (2000)
  7. K. Sato and H. Katayama-Yoshida, Jpn. J. Appl. Phys. 40, 1334 (2001)
  8. K.-K. Kim, H.-S. Kim, D.-K. Hwang, J.-H. Lim, and S.-J. Park, Appl. Phys. Lett. 83, 63 (2003)
  9. Y. W. Heo, S. J. Park, K. Ip, S. J. Pearton, and D. P. Norton, Appl. Phys. Lett. 83, 1128 (2003) https://doi.org/10.1063/1.1590422
  10. D. R. Lide, CRC Handbook of Chemistry and Physics, CRC, Boca Raton (2002) pp. (5-6)-(5-23) and (9-56)
  11. K. H. Kim, K. J. Lee, D. J. Kim, H. J. Kim, Y. E. Ihm, C. G. Kim, S. H. Yoo, and C. S. Kim, Appl. Phys. Lett. 82, 4755 (2003)
  12. T. Miura, Y. Yamamoto, S. Itaya, K. Suga, K. Kindo, T. Takenobu, Y. Iwasa, and H. Hori, Physica B 346-347, 402 (2004)
  13. S. N. Kale, S. B. Ogale, S. R. Shinde, N. Sahasrabuddhe, V. N. Kulkarni, R. L. Greene, and T. Venkatesan, Appl. Phys. Lett. 82, 2100 (2003)
  14. C. L. Chien and C. R. Westgate, The Hall Effect and Its Applications, Plenum, New York (1980)

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