Journal of Sensor Science and Technology (센서학회지)

The Korean Sensors Society (한국센서학회)
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MISFET type H2 sensor using pd-black catalytic metal gate for high performance

Pd-black 촉매금속 이용한 고성능 MISFET 형 수소센서

  • Kang, Ki-Ho (Department of Electronics, Kyungpook National University) ;
  • Cho, Yong-Soo (Department of Electronics, Kyungpook National University) ;
  • Han, Sang-Do (Korea Institute of Energy Research) ;
  • Choi, Sie-Young (Department of Electronics, Kyungpook National University)
  • Published : 2006.03.31
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Abstract

We have fabricated the Pd-blck/NiCr gate MISFET-type $H_2$ sensor to detect the hydrogen in atmosphere. A differential pair-type structure was used to minimize the intrinsic voltage drift of the MISFET. The Pd-black film was deposited in the argon environment by thermal evaporation. In order to eliminate the blister formation in the surface of the hydrogen sensing gate metal, Pd-black/NiCr double metal layer was deposited on the gate insulator. The scanning electron microscopy and the auger electron spectroscopy was used to analyze their surface morphology and basic structure. The Pd-black/NiCr gate MISFET has been shown high sensitivity and stability more than Pd-planar/NiCr gate MISFET.

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References

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