Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Thermal Stability Improvement of Ni-Silicide on the SOI Substrate Doped B11 for Nano-scale CMOSFET

나노급 CMOSFET을 위한 SOI기판에 도핑된 B1l을 이용한 니켈-실리사이드의 열안정성 개선

  • 정순연 (충남대학교 전자공학과) ;
  • 오순영 (충남대학교 전자공학과) ;
  • 이원재 (충남대학교 전자공학과) ;
  • 장잉잉 (충남대학교 전자공학과) ;
  • 종준 (충남대학교 전자공학과) ;
  • 이세광 (충남대학교 전자공학과) ;
  • 김영철 (한국기술교육대학교 신소재공학과) ;
  • 이가원 (충남대학교 전자공학과) ;
  • 왕진석 (충남대학교 전자공학과) ;
  • 이희덕 (충남대학교 전자공학과)
  • Published : 2006.11.01
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Abstract

In this paper, thermal stability of Ni-silicide formed on the SOI substrate with $B_{11}$ has been characterized. The sheet resistance of Ni-silicide on un-doped SOI and $B_{11}$ implanted bulk substrate was increased after the post-silicidation annealing at $700^{\circ}C$ for 30 min. However, in case of $B_{11}$ implanted SOI substrate, the sheet resistance showed stable characteristics after the post-silicidation annealing up to $700^{\circ}C$ for 30 min. The main reason of the excellent property of $B_{11}$ sample is believed to be the retardation of Ni diffusion by the boron and bottom oxide layer of SOI. Therefore, retardation of Ni diffusion is highly desirable lot high performance Ni silicide technology.

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References

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