Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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Atomic Layer Etching of Silicon Using a Ar Neutral Beam of Low Energy

저에너지의 Ar 중성빔을 이용한 Silicon의 Atomic Layer Etching

  • Oh, Chang-Kwon (Department of Advanced Materials Science & Engineering, Sungkyunkwan University) ;
  • Park, Sang-Duk (Department of Advanced Materials Science & Engineering, Sungkyunkwan University) ;
  • Yeom, Geun-Young (The National Program for Tera-Lavel Nanodevice)
  • 오창권 (성균관대학교 공과대학 신소재공학과) ;
  • 박상덕 (성균관대학교 공과대학 신소재공학과) ;
  • 염근영 (테라급 나노소자 개발 사업단)
  • Published : 2006.04.27
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Abstract

In this study, atomic layer etching of Si has been carried out using $Cl_2$ adsorption followed by the irradiation Ar neutral beam of low energy. In this experiment, the etch rate of Si was dependent on the $Cl_2$ pressure(the surface coverage of chlorine) and the irradiation time of Ar neutral beam(the flux density of Ar neural beam). And the etch rate of Si(100) and Si(111) were saturated exactly at one monolayer per cycle with $1.36{\AA}/cycle\;and\;1.57{\AA}/cycle$, respectively.

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References

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