JSTS:Journal of Semiconductor Technology and Science

The Institute of Electronics and Information Engineers (대한전자공학회)
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?Growth and Characterization of InGaN/GaN MQWs on Two Different Types of Substrate

  • Kim, Taek-Sung (Semiconductor Physics Research Center and Department of Semiconductor Science and Technology, Chonbuk National University) ;
  • Park, Jae-Young (Semiconductor Physics Research Center and Department of Semiconductor Science and Technology, Chonbuk National University) ;
  • Cuong, Tran Viet (Semiconductor Physics Research Center and Department of Semiconductor Science and Technology, Chonbuk National University) ;
  • Hong, Chang-Hee (Semiconductor Physics Research Center and Department of Semiconductor Science and Technology, Chonbuk National University)
  • Published : 2006.06.30
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Abstract

We report on the growth and characterization of InGaN/GaN MQWs on two different types of sapphire substrates and GaN substrates. The InGaN/GaN MQWs are grown by using metalorganic chemical vapor deposition. Our analysis of the satellite peaks in the HRXRD patterns shows, GaN substrates InGaN/GaN MQW compared to sapphire substrates InGaN/GaN MQW, more compressive strain on GaN substrates than on sapphire substrates. However, results of optical investigation of InGaN/GaN MQWs grown on GaN substrates and on sapphire substrates, which have lower Stokes-like shift of PL to GaN substrates compared to sapphire substrates, are shown to the potential fluctuation and the quantum-confined Stark effect induced by the built-in internal field due to spontaneous and straininduced piezoelectric polarizations. The InGaN/GaN MQWs are shown to quantify the Stokes-like shift as a function of x.

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References

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