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Anti-reflection Coating of Silicon Nitride Film for Solar Cell by RF Magnetron Sputtering

RF 마그네트론 스퍼터링을 이용한 태양전지용 질화 실리콘 반사방지막

  • 최균 (요업기술원 이천분원) ;
  • 최의석 (요업기술원 이천분원) ;
  • 황진하 (홍익대학교 신소재공학과) ;
  • 이수홍 (세종대학교 전략에너지연구소)
  • Published : 2007.10.31

Abstract

Silicon nitride films for an anti-reflection coating were deposited on silicon via RF magnetron sputtering using a $Si_3N4$ target. The best result was obtained at the sputtering condition of 340 W RF power, 5 mtorr Ar atmosphere, $100^{\circ}C$ substrate temperature. The films showed 7.9% reflectance minimum with 2.35 refractive index. 0.21 absorption coefficient at 66.6 nm thickness. The surface morphology showed a smooth and dense film with good adhesion to silicon surface.

Keywords

References

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  10. Please visit an web site, http://www.ee.byu.edu/photonics/ ARcoatings.phtml, calculate the reflectance and thickness for the film of n= 2.35 on silicon substrate at 635 nm ($\lambda$)