Journal of information and communication convergence engineering

The Korea Institute of Information and Commucation Engineering (한국정보통신학회)
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The measurement of p-n junction depth by SEM

  • Hur, Chang-Wu (Mokwon University, Department of Electronics Engineering) ;
  • Lee, Kyu-Chung (Department of Information Technology at Sungkyul University)
  • Published : 2007.12.30
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Abstract

In this paper, the p-n junction depth with nondestructive method by using scanning electron microscopy (SEM) is determined and conformed. By measuring the critical short circuit current on the p-n junction which induced by electron beam and calculating generation range, the diffusion depth can be obtained. It can be seen that values destructively measured by constant angle lapping and nondestructively by this study almost concur. As this result, it is purposed that diffusion depth of p-n junction can be easily measured by nondestruction. This nondestructive method can be recommended highly to the industrial analysis.

Keywords

References

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