Properties of Organic PMMA Gate Insulator Film at Various Concentration and Film Thickness

PMMA 유기 게이트 절연막의 농도와 두께에 따른 특성

  • Yoo, Byung-Chul (Department of Electronics and Computer Engineering, Dankook University) ;
  • Gong, Su-Cheol (Department of Electronics and Computer Engineering, Dankook University) ;
  • Shin, Ik-Sub (Department of Electronics and Computer Engineering, Dankook University) ;
  • Shin, Sang-Bea (Department of Electronics and Computer Engineering, Dankook University) ;
  • Lee, Hak-Min (Department of Electronics and Computer Engineering, Dankook University) ;
  • Park, Hyung-Ho (Division of Materials Science and Engineering, Hanyang University) ;
  • Jeon, Hyung-Tag (Department of Ceramics Engineering, Yonsei University) ;
  • Chang, Young-Chul (School of Mechatronics Engineering, Korea University of Technology and Education) ;
  • Chang, Ho-Jung (Department of Electronics and Computer Engineering, Dankook University)
  • 유병철 (단국대학교 전자.컴퓨터공학과) ;
  • 공수철 (단국대학교 전자.컴퓨터공학과) ;
  • 신익섭 (단국대학교 전자.컴퓨터공학과) ;
  • 신상배 (단국대학교 전자.컴퓨터공학과) ;
  • 이학민 (단국대학교 전자.컴퓨터공학과) ;
  • 박형호 (연세대학교 세라믹공학과) ;
  • 전형탁 (한양대학교 신소재공학과) ;
  • 장영철 (한국기술교육대학교 메카트로닉스공학과) ;
  • 장호정 (단국대학교 전자.컴퓨터공학과)
  • Published : 2007.12.30

Abstract

The MIM(metal-insulator-metal) capacitors with the Al/PMMA/ITO/Glass structures were manufactured according to various PMMA concentration of 1, 2, 4, 6, 8 wt%. The lowest leakage current and the largest capacitance were found to be 2.3 pA and 1.2 nF, respectively, for the device with 2 wt% PMMA concentration. The measured capacitance of the devices was almost same values with the calculated one. The optimum film thickness was obtained at the value of 48 nm, showing that the capacitance and leakage current were 1.92 nF, 0.3 pA at 2 wt%, respectively. From this experiment, the PMMA gate insulator films can be applicable to the organic thin film transistors.

Keywords