Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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Characteristics of Nickel_Titanium Dual-Metal Schottky Contacts Formed by Over-Etching of Field Oxide on Ni/4H-SiC Field Plate Schottky Diode and Improvement of Process

Ni/4H-SiC Field Plate Schottky 다이오드 제작 시 과도 식각에 의해 형성된 Nickel_Titanium 이중 금속 Schottky 접합 특성과 공정 개선 연구

  • Oh, Myeong-Sook (Department of Materials Science and Engineering, Seoul National University) ;
  • Lee, Jong-Ho (Department of Materials Science and Engineering, Seoul National University) ;
  • Kim, Dae-Hwan (Department of Materials Science and Engineering, Seoul National University) ;
  • Moon, Jeong-Hyun (Department of Materials Science and Engineering, Seoul National University) ;
  • Yim, Jeong-Hyuk (Department of Materials Science and Engineering, Seoul National University) ;
  • Lee, Do-Hyun (Department of Materials Science and Engineering, Seoul National University) ;
  • Kim, Hyeong-Joon (Department of Materials Science and Engineering, Seoul National University)
  • 오명숙 (서울대학교 재료공학부 대학원) ;
  • 이종호 (서울대학교 재료공학부 대학원) ;
  • 김대환 (서울대학교 재료공학부 대학원) ;
  • 문정현 (서울대학교 재료공학부 대학원) ;
  • 임정혁 (서울대학교 재료공학부 대학원) ;
  • 이도현 (서울대학교 재료공학부 대학원) ;
  • 김형준 (서울대학교 재료공학부 대학원)
  • Published : 2009.01.31
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Abstract

Silicon carbide (SiC) is a promising material for power device applications due to its wide band gap (3.26 eV for 4H-SiC), high critical electric field and excellent thermal conductivity. The Schottky barrier diode is the representative high-power device that is currently available commercially. A field plate edge-terminated 4H-SiC was fabricated using a lift-off process for opening the Schottky contacts. In this case, Ni/Ti dual-metal contacts were unintentionally formed at the edge of the Schottky contacts and resulted in the degradation of the electrical properties of the diodes. The breakdown voltage and Schottky barrier height (SBH, ${\Phi}_B$) was 107 V and 0.67 eV, respectively. To form homogeneous single-metal Ni/4H-SiC Schottky contacts, a deposition and etching method was employed, and the electrical properties of the diodes were improved. The modified SBDs showed enhanced electrical properties, as witnessed by a breakdown voltage of 635 V, a Schottky barrier height of ${\Phi}_B$=1.48 eV, an ideality factor of n=1.04 (close to one), a forward voltage drop of $V_F$=1.6 V, a specific on resistance of $R_{on}=2.1m{\Omega}-cm^2$ and a power loss of $P_L=79.6Wcm^{-2}$.

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References

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