The Transactions of The Korean Institute of Electrical Engineers (전기학회논문지)

The Korean Institute of Electrical Engineers (대한전기학회)
권호 표지

Linearization of CMOS Drive Amplifier with IMD Canceller

IMD 상쇄기를 적용한 CMOS 구동 증폭기 선형화 방법

  • 김도균 (중앙대 공대 전자전기공학부) ;
  • 홍남표 (중앙대 공대 전자전기공학부) ;
  • 문연태 (중앙대 공대 전자전기공학부) ;
  • 최영완 (중앙대 공대 전자전기공학부)
  • Published : 2009.05.01
Download PDF
⟨ Previous Next ⟩

Abstract

We have designed and fabricated a linear drive amplifier with a novel intermodulation distortion(IMD) canceller using $0.18{\mu}m$ CMOS process. The drive amplifier with IMD canceller is composed of a cascode main amplifier and an additional common-source IMD canceller. Since the IMD canceller generates IM3($3^{rd}$-order imtermodulation) signal with $180^{\circ}$ phase difference against the IM3 of the cascode main amplifier, the IM3 power is drastically eliminated. As of the measurement results, $OP_{1dB}$, $OIP_3$, and power-add efficiency are 5.5 dBm, 15.5 dBm, and 21%, respectively. Those are 5 dB, 6 dB, and 13.5% enhanced values compared to a conventional cascode drive amplifier. The IMD3 of the drive amplifier with IMD canceller is enhanced more than 10 dB compared to that of the conventional cascode drive amplifier for input power ranges from -22 to -14 dBm.

Keywords

References

  1. Tomas H. Lee, The Design of CMOS Radio-Frequency Integrated Circuits. NY : Cambridge University Press, 2004
  2. B. Razavi, RF Microelectonics, NJ : Prentice-Hall, 1998
  3. I. Kwon, Y. Eo, S, Song, K. Choi, H. Lee, and K. Lee, 'A Fully Integrated 2.4 GHz CMOS RF Transceiver for IEEE 802.15.4', in Proc. IEEE RF Integrated Circuits Symp., June 2006, pp. 285-278 https://doi.org/10.1109/RFIC.2006.1651136
  4. T. Kim, B. Kim, and K. Lee, 'Highly Linear Receiver Front-End Adopting MOSFET Transconductance Linearization by Multiple Gated Transistors', IEEE J. Solid-State Circuits, Vol. 39, no. 1, pp. 223-229, Jan, 2004 https://doi.org/10.1109/JSSC.2003.820843
  5. V. Aparin and L. E, Larson, 'Modified Derivative Superposition Method for Linearizing FET Low-Noise Amplifiers', IEEE Trans. Microwave Theory Tech., Vol. 53, no. 2, pp, 571-581, Feb. 2005 https://doi.org/10.1109/TMTT.2004.840635
  6. S. Ganean, E. Sanchez-Sinencio, and J. Silva-Marinez, 'A Highly Linear Low-Noise Amplifier', IEEE Trans. Microwave Theory Tech., Vol. 54, no. 12, pp. 4079-4085, Dec, 2006 https://doi.org/10.1109/TMTT.2006.885889
  7. T. Kim, B. Kim, I. Nam, B. Ko, and K. Lee, 'A Low-Power Highly Linear Cascoded Multiple-Gate Transistor CMOS RF Amplifier with 10 dB IP3 Improvement', IEEE Microw. Wireless Compon. Lett., Vol. 13, no. 9, pp. 420-422, Sep. 2003 https://doi.org/10.1109/LMWC.2003.818748
  8. T. Kim and S. Kim, 'Post-Linearization of Cascode CMOS Low Noise Amplifier Using Folded PMOS IMD Sinker', IEEE Microw. Wirelss Compon. Lett., Vol. 16, no. 4, pp. 182-184, Apr. 2006 https://doi.org/10.1109/LMWC.2006.872131