Journal of Integrative Natural Science (통합자연과학논문집)
- Volume 2 Issue 4
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- Pages.265-269
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- 2009
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- 2005-1042(pISSN)
Formation of Charged Exciton in GaAs-AlGaAs Double-Quantum-Well Structure at High Magnetic Field
GaAs 이중 양자우물구조에서 고자기장에 유도된 대전된 엑시톤의 발생
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Kim, Yong Min
(Department of Applied Physics, Dankook University)
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김용민
(단국대학교 응용물리학과)
- Received : 2009.11.16
- Accepted : 2009.11.24
- Published : 2009.12.31
Abstract
The photoluminescence was measured in GaAs-AlGaAs double-quantum-well structure at high magnetic field. Although the phototransition characteristics displayed a free-particle transition at low magnetic field, the change of free-particle transition into bound-exciton transition was observed at high magnetic field (above 10 T). A charged exciton formation due to charge-unbalanced electron-hole was identified by using a spin-polarized photoluminescence method. An increase of exciton formation due to the localization of free-particle at magnetic field was observed according to the increase of magnetic field.