JSTS:Journal of Semiconductor Technology and Science

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Symmetric and Asymmetric Double Gate MOSFET Modeling

  • Abebe, H. (USC Viterbi School of Engineering, Information Sciences Institute, MOSIS service) ;
  • Cumberbatch, E. (Claremont Graduate University, School of Mathematical Sciences) ;
  • Morris, H. (Claremont Graduate University, School of Mathematical Sciences) ;
  • Tyree, V. (USC Viterbi School of Engineering, Information Sciences Institute, MOSIS service) ;
  • Numata, T. (Nagoya University, Department of Electrical and Computer Engineering) ;
  • Uno, S. (Nagoya University, Department of Electrical and Computer Engineering)
  • Received : 2009.07.05
  • Published : 2009.12.30
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Abstract

An analytical compact model for the asymmetric lightly doped Double Gate (DG) MOSFET is presented. The model is developed using the Lambert Function and a 2-dimensional (2-D) parabolic electrostatic potential approximation. Compact models of the net charge and channel current of the DG-MOSFET are derived in section 2. Results for the channel potential and current are compared with 2-D numerical data for a lightly doped DG MOSFET in section 3, showing very good agreement.

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References

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