JSTS:Journal of Semiconductor Technology and Science

  • 제9권2호
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  • Pages.91-97
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  • 2009
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  • 1598-1657(pISSN)
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  • 2233-4866(eISSN)
대한전자공학회 (The Institute of Electronics and Information Engineers)
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The Effects of Growth Temperature and Substrate Tilt Angle on GalnP/GaAs Tandem Solar Cells

  • Jun, Dong-Hwan (Dept. Device Development, Korea Advanced Nano Fab Center) ;
  • Kim, Chang-Zoo (Dept. Device Development, Korea Advanced Nano Fab Center) ;
  • Kim, Hog-Young (College of Humanities and Sciences, Hanbat National University) ;
  • Shin, Hyun-Beom (Dept. Device Development, Korea Advanced Nano Fab Center) ;
  • Kang, Ho-Kwan (Dept. Device Development, Korea Advanced Nano Fab Center) ;
  • Park, Won-Kyu (Dept. Device Development, Korea Advanced Nano Fab Center) ;
  • Shin, Ki-Soo (Dept. Device Development, Korea Advanced Nano Fab Center) ;
  • Ko, Chul-Gi (Dept. Device Development, Korea Advanced Nano Fab Center)
  • 발행 : 2009.06.30
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초록

The performance of GaInP/GaAs tandem solar cells with AlInP growth temperatures of 680$^{\circ}C$ and 700 $^{\circ}C$ on n-type GaAs (100) substrate with 2$^{\circ}$ and 6$^{\circ}$ tilt angles has been investigated. The series resistance and open circuit voltage of the fabricated tandem solar cells are affected by the substrate tilt angles and the growth temperatures of the window layer when zinc is doped in the tunnel diode. With carbon doping as a p-type doping source in the tunnel diode and the effort of current matching between top and bottom cells, GaInP/GaAs tandem solar cell has been exhibited 25.58% efficiency.

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참고문헌

  1. D. J. Friedman, S. R. Kurtz, K. A. Bertness, A. E. Kibbler, C. Kramer, J. M. Olson, D. L. King, B. R. Hansen, and J. K. Snyder, Prog. Photovolt., Res. Appl., vol. 3, pp. 47-50, (1995) https://doi.org/10.1002/pip.4670030105
  2. R. R. King, D. C. Law, C. M. Fetzer, R. A. Sherif, K. M. Edmondson, S. Kurtz, G. S. Kinsey, H. L. Cotal, D. D. Krut, J. H. Ermer, and N. H. Karam, in Proc. 20th Eur. Photovoltaic Solar Energy Conf., Barcelona, Spain, 2005, pp. 118-123
  3. M. Yamaguchi, T. Takamoto, T. Agui, M. Kaneiwa, K. Nishimura, Y. Yagi, T. Sasaki, N. Ekins-Daukes, H.-S. Lee, N. Kojima, and Y. Ohshita, in Proc. 19th Eur. Photovoltaic Solar Energy Conf., Paris, France, 2004, pp. 3610-3613
  4. J. Nelson, The physics of solar cells, (Imperial college Press, London, 2003)
  5. I. Pietzonka, T. Sass, R. Franzheld, G. Wagner and V. Gottschalch, J. Crystal. Growth, vol. 195, pp. 21-27, (1998) https://doi.org/10.1016/S0022-0248(98)00594-6
  6. Ken Takahashi, Shigeki Yamada, Tsunehiro Unno, and Shoji Kuma, Solar Energy Materials and Solar Cells, vol. 50, pp. 169-176, (1998) https://doi.org/10.1016/S0927-0248(97)00141-4
  7. S. M. Sze, Physics of semiconductor devices, second edition, (John Wiley & Sons, Inc, 1981), 516

피인용 문헌

  1. Single-material zinc sulfide bi-layer antireflection coatings for GaAs solar cells vol.21, pp.S5, 2013, https://doi.org/10.1364/OE.21.00A821