JSTS:Journal of Semiconductor Technology and Science

  • 제9권2호
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  • Pages.98-103
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  • 2009
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  • 1598-1657(pISSN)
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  • 2233-4866(eISSN)
대한전자공학회 (The Institute of Electronics and Information Engineers)
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Application of Area-Saving RF Test Structure on Mobility Extraction

  • Lee, Jae-Hong (Inter-University Semiconductor Research Center (ISRC), and School of Electrical Engineering, Seoul National University) ;
  • Kim, Jun-Soo (Inter-University Semiconductor Research Center (ISRC), and School of Electrical Engineering, Seoul National University) ;
  • Park, Byung-Gook (Inter-University Semiconductor Research Center (ISRC), and School of Electrical Engineering, Seoul National University) ;
  • Lee, Jong-Duk (Inter-University Semiconductor Research Center (ISRC), and School of Electrical Engineering, Seoul National University) ;
  • Shin, Hyung-Cheol (Inter-University Semiconductor Research Center (ISRC), and School of Electrical Engineering, Seoul National University)
  • 발행 : 2009.06.30
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초록

An RF test structure is proposed and its applicability is confirmed by measuring DC characteristics and high frequency characteristics. Effective mobility extraction is also performed to confirm the validity of proposed test structure. The area of suggested test structure consumed on wafer was decreased by more than 50% and its characteristics do not be degraded compared with conventional structure.

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참고문헌

  1. Ming-Hsiang Cho, Ryan Lee, An-Sam Peng, David Chen, Chune-Sin Yeh, and Lin-Kun Wu, "Miniature RF Test Structure for On-Wafer Device Testing and In-Line Process Monitoring", IEEE Trans. Electron Devices, vol. 55, no. 1, pp. 462-465, 2008 https://doi.org/10.1109/TED.2007.911037
  2. Choon Beng Sia, Beng Hwee Ong,Kok Meng Lim, Kiat SengYeo, Manh Anh Do, Jian-Guo Ma, and Tariq Alam, "Novel RF process monitoring test structure for silicon devices", IEEE Trans. Semi-conductor Manufacturing, vol. 18, no. 2, pp. 246-254, 2005 https://doi.org/10.1109/TSM.2005.845095
  3. M. C. A. M. Koolen, J. A. M. Geelen, and M. P. J. G. Versleijen, "An Improved De-embedding Tech-nique for On-wafer High Frequency Characteri-zation", IEEE Bipolar Circuits and Technology Meeting, pp. 188-191, 1991 https://doi.org/10.1109/BIPOL.1991.160985
  4. Myounggon Kang, In Man Kang, Young Ho Jung, and Hyungcheol Shin, "Separate Extraction of Gate Resistance Components in RF MOSFETs", IEEE Trans. Electron Devices, vol. 54, no. 6, pp. 1459-1463, 2007 https://doi.org/10.1109/TED.2007.896361
  5. Junsoo Kim, Jaehong Lee, Yeonam Yun, Byung-Gook Park, Jong Duk Lee, and Hyungcheol Shin, "Accurate Extraction of Mobility, Effective Channel Length, and Source/Drain Resistance in 60 nm MOSFETs", International Conference on Solid State Devices and Materials, pp. 442-443, 2007
  6. Junsoo Kim, Jaehong Lee, Yeonam Yun, Byung-Gook Park, Jong Duk Lee, and Hyungcheol Shin, "Extraction of effective carrier velocity and observation of velocity overshoot in sub-40 nm MOSFETs", Journal of Semiconductor Technology and Science, vol. 8, no. 2, pp. 115-120, 2008 https://doi.org/10.5573/JSTS.2008.8.2.115