Clean Technology (청정기술)

The Korean Society of Clean Technology (한국청정기술학회)
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Stripping of High-Dose Ion-Implanted Photoresist Using Co-solvent and Ultra-sonication in Supercritical Carbon Dioxide

초임계이산화탄소 내에서 공용매 및 초음파를 이용한 고농도이온주입 포토레지스트의 제거

  • Kim, Seung-Ho (Divison of Image and Information Engineering, Pukyung National University) ;
  • Lim, Kwon-Taek (Divison of Image and Information Engineering, Pukyung National University)
  • 김승호 (부경대학교 화상정보공학부) ;
  • 임권택 (부경대학교 화상정보공학부)
  • Published : 2009.06.30
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Abstract

A high-dose ion-implanted photoresist (HDIPR) was stripped off from the surface of a semiconductor wafer by using a mixture of supercritical carbon dioxide and a co-solvent. The additional ultrasonication improved the stripping efficiency remarkably and thus reduced the stripping time by supplying physical force to the substrate. We investigated the effect of co-solvents, co-solvent concentration, and stripping temperature and pressure on the stripping efficiency. The wafer surfaces before and after stripping were analyzed by scanning electron microscopy and by an energy dispersive X-ray spectrometer. The HDIPR could be stripped off completely in 3 min with 10%(w/w) acetone/sc$C0_2$ mixture at 27.6 MPa and 343 K.

초임계이산화탄소와 공용매의 혼합물을 사용하여 반도체 웨이퍼 기판으로부터 고농도이온주입 포토레지스트(HDIPR)를 제거하였다. 또한 고압 셀 내부에 초음파 장치를 부착하여 웨이퍼 표면에 물리적 힘을 제공함으로서 세정용액의 HDIPR에 대한 스트리핑 성능을 현저히 향상시키고, 제거 시간을 단축시켰다. 공용매의 종류 및 농도, 공정 온도, 압력 변화에 따른 HDIPR 스트리핑 특성을 조사하였으며, 웨이퍼 표면의 제거 전후의 상태 및 성분을 scanning electron microscopy 과 energy dispersive X-ray spectrometer를 이용하여 분석하였다. 10 w/w% 함량의 아세톤 공용매를 이용하여 공정압력 27.6 MPa과 온도 343 K 의 조건에서 3분의 초음파 처리시간을 거쳐 HDIPR을 완전히 제거할 수 있었다.

Keywords

References

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