한국재료학회지 (Korean Journal of Materials Research)

  • 제20권4호
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  • Pages.210-216
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  • 2010
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  • 1225-0562(pISSN)
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  • 2287-7258(eISSN)
한국재료학회 (Materials Research Society of Korea)
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기판 세정특성에 따른 표면 패시배이션 및 a-Si:H/c-Si 이종접합 태양전지 특성변화 분석

Effect of Cleaning Processes of Silicon Wafer on Surface Passivation and a-Si:H/c-Si Hetero-Junction Solar Cell Performances

  • 송준용 (한국에너지기술연구원 태양광연구단) ;
  • 정대영 (한국에너지기술연구원 태양광연구단) ;
  • 김찬석 (한국에너지기술연구원 태양광연구단) ;
  • 박상현 (한국에너지기술연구원 태양광연구단) ;
  • 조준식 (한국에너지기술연구원 태양광연구단) ;
  • 송진수 (한국에너지기술연구원 태양광연구단) ;
  • 왕진석 (충남대학교 전자전파정보통신과) ;
  • 이정철 (한국에너지기술연구원 태양광연구단)
  • Song, Jun-Yong (Photovoltaic Research Center, Korea Institute of Energy Research) ;
  • Jeong, Dae-Young (Photovoltaic Research Center, Korea Institute of Energy Research) ;
  • Kim, Chan-Seok (Photovoltaic Research Center, Korea Institute of Energy Research) ;
  • Park, Sang-Hyun (Photovoltaic Research Center, Korea Institute of Energy Research) ;
  • Cho, Jun-Sik (Photovoltaic Research Center, Korea Institute of Energy Research) ;
  • Song, Jin-Soo (Photovoltaic Research Center, Korea Institute of Energy Research) ;
  • Wang, Jin-Suk (Department of Electronic, Chungnam National University) ;
  • Lee, Jeong-Chul (Photovoltaic Research Center, Korea Institute of Energy Research)
  • 발행 : 2010.04.27
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초록

This paper investigates the dependence of a-Si:H/c-Si passivation and heterojunction solar cell performances on various cleaning processes of silicon wafers. It is observed that the passivation quality of a-Si:H thin-films on c-Si wafers depends highly on the initial H-termination properties of the wafer surface. The effective minority carrier lifetime (MCLT) of highly H-terminated wafer is beneficial for obtaining high quality passivation of a-Si:H/c-Si. The wafers passivated by p(n)-doped a-Si:H layers have low MCLT regardless of the initial H-termination quality. On the other hand, the MCLT of wafers incorporating intrinsic (i) a-Si:H as a passivation layer shows sensitive variation with initial cleaning and H-termination schemes. By applying the improved cleaning processes, we can obtain an MCLT of $100{\mu}sec$ after H-termination and above $600{\mu}sec$ after i a-Si:H thin film deposition. By adapting improved cleaning processes and by improving passivation and doped layers, we can fabricate a-Si:H/c-Si heterojunction solar cells with an active area conversion efficiency of 18.42%, which cells have an open circuit voltage of 0.670V, short circuit current of $37.31\;mA/cm^2$ and fill factor of 0.7374. These cells show more than 20% pseudo efficiency measured by Suns-$V_{oc}$ with an elimination of series resistance.

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