Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
권호 표지
DOI QR코드

DOI QR Code

Growth of Large Scale CdTe(400) Thin Films by MOCVD

MOCVD를 이용한 대면적 CdTe 단결정 박막성장

  • 김광천 (한국과학기술연구원 재료연구본부 전자재료센터) ;
  • 정규호 (한국과학기술연구원 재료연구본부 전자재료센터) ;
  • 유현우 (한국과학기술연구원 재료연구본부 전자재료센터) ;
  • 임주혁 (한국과학기술연구원 재료연구본부 전자재료센터) ;
  • 김현재 (연세대학교 전기전자공학부) ;
  • 김진상 (한국과학기술연구원 재료연구본부 전자재료센터)
  • Published : 2010.04.01
Download PDF
⟨ Previous Next ⟩

Abstract

We have investigated growth of CdTe thin films by using (As, GaAs) buffer layers for application of large scale IR focal plane arrays(IFPAs). Buffer layers were grown by molecular beam epitaxy(MBE), which reduced the lattice mismatch of CdTe/Si and prevented native oxide on Si substrates. CdTe thin films were grown by metal organic chemical deposition system(MOCVD). As a result, polycrystalline CdTe films were grown on Si(100) and arsenic coated-Si(100) substrate. In other case, single crystalline CdTe(400) thin film was grown on GaAs coated-Si(100) substrate. Moreover, we observed hillock structure and mirror like surface on the (400) orientated epitaxial CdTe thin film.

Keywords

References

  1. Tomas C. Antony, Alan L. Faheubruch, Michael G. Peters, and Richard H. Bube, “Electrical properties of CdTe films and junction”, J. Appl. Phys., Vol. 57, p. 400, 1985. https://doi.org/10.1063/1.334764
  2. M. Niraula, K. Yasuda, K. Takagi, H. Kusama, M. Tominaga, Y. Yamamoto, Y. Agata, and K. Suzuki, “Development of nuclear radiation detectors based on epitaxially grown thick CdTe layers on n-GaAs substrates”, J. Electron. Mater., Vol. 34, p. 815, 2005. https://doi.org/10.1007/s11664-005-0026-4
  3. S. Neretina, R. A. Sochinskii, M. weber, K. G. Lynn, J. Wojcik, G. N. Pearson, J. S. Preston, and P. Mascher, “Growth of CdTe/Si(100) thin fims by pulse laser deposition for photonic applications”, J. Vac. Sci. Technol. A, Vol. 24, No. 3, p. 606, 2006. https://doi.org/10.1116/1.2183297
  4. S. R. Rao, S. S. Shintri, and I. B. Bhat, “Metalorganic vapor-phase epitaxial growth of (211)B CdTe on (211) Si using Ge interfacial layer”, J. Electron. Mater., Vol. 38, p. 1618, 2009. https://doi.org/10.1007/s11664-009-0719-1
  5. David J. Smith, S.-C. Y. Tsen, D. Chandrasekhar, P. A. Crozier, S. Rujirawat, G. Brill, Y. P. Chen, R. Sporken, and S. Sivananthan, “Growth and characterization of CdTe:Si heterostructures - effect of substrate orientation”, Mater. Sci. Eng. B, Vol. 77, p. 93, 1993. https://doi.org/10.1016/S0921-5107(00)00480-3
  6. R. Ashokan, N. K. Dhar, B. Yang, A. Akhiyat, T. S. Lee, S. Rujifawat, S. Yousuf, and S. Sivananthan, “Variable area MWIR diodes on HgCdTe/Si grown by molecular beam epitaxy”, J. Electron. Mater., Vol. 29, p. 636, 2000. https://doi.org/10.1007/s11664-000-0197-y
  7. H. Tatsuoka, H. Kuwabara, Y. Nakanishi, and H. Fujiyasu, “CdTe(111) growth on misoriented Si(100) substrates by hot-wall epitaxy”, J. Cryst. Growth, Vol. 129, p. 686, 1993. https://doi.org/10.1016/0022-0248(93)90504-P
  8. K. Shigenaka, K. Matsushita, L. Sugiura, F. Nakata, K. Hirahara, M. Uchikoshi, M. Nagashima, and H. Wada “Orientation dependence of HgCdTe epitaxial layers grown by MOCVD on Si substrates”, J. Electron. Mater., Vol. 25, p. 1347, 1996. https://doi.org/10.1007/BF02655031
  9. S.-H. Suh, J.-S. Kim, H. J. Kim, and J.-H. Song, “Control of hillock formation during MOVPE growth of HgCdTe by suppressing the pre-reaction of the Cd precursor with Hg”, J. Crysta. Growth, Vol. 236, p. 119, 2002. https://doi.org/10.1016/S0022-0248(01)02224-2