Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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The Research on Trench Etched Field Ring with Dual Ion-Implantation for Power Devices

이중 이온주입 공정을 이용한 트렌치 필드링 설계 최적화 및 전기적 특성에 관한 연구

  • Yang, Sung-Min (The School of Electrical Engineering, Korea University) ;
  • Oh, Ju-Hyun (The School of Electrical Engineering, Korea University) ;
  • Bae, Young-Seok (The School of Electrical Engineering, Korea University) ;
  • Sung, Man-Young (The School of Electrical Engineering, Korea University)
  • 양성민 (고려대학교 전기공학과) ;
  • 오주현 (고려대학교 전기공학과) ;
  • 배영석 (고려대학교 전기공학과) ;
  • 성만영 (고려대학교 전기공학과)
  • Published : 2010.05.01
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Abstract

The dual ion-implantation trench edge termination techniques were investigated and optimized using a two-dimensional device simulator. By trenching the field ring site which would be dual implanted, a better blocking capability can be obtained. The results show that the p-n junction with dual implanted junction field-ring can accomplish nearly 20% increase of breakdown voltage in comparison with the conventional trench field-rings. The fabrication is relatively difficult. But the trench etched field ring with dual ion-implantation is surpassed for breakdown voltage and consume same area and extensive device simulations as well as qualitative analysis confirm these conclusions.

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References

  1. Y. H. Kim and M. Y. Sung, Proc. International Conference on Integrated Circuit Design & Technology 2008 (ICICDT., Minatec, Grenoble, France,2008) p. 71.
  2. B. J. Baliga, Power Semiconductor Devices, 1st ed. (PWS Publishing Company, 1996) p. 91.
  3. J. S. Lee and M. Y. Sung, IEICE Electronics Express 6, (ELEX., 2009) p. 1621. https://doi.org/10.1587/elex.6.1621