DOI QR코드

DOI QR Code

Electrical and Optical Properties of Zinc Oxide Thin Films Deposited Using Atomic Layer Deposition

  • Kim, Jeong-Eun (Department of Materials Science and Engineering, Hongik University) ;
  • Bae, Seung-Muk (Department of Materials Science and Engineering, Hongik University) ;
  • Yang, Hee-Sun (Department of Materials Science and Engineering, Hongik University) ;
  • Hwang, Jin-Ha (Department of Materials Science and Engineering, Hongik University)
  • Received : 2010.07.01
  • Accepted : 2010.07.19
  • Published : 2010.07.31

Abstract

Zinc oxide (ZnO) thin films were deposited using atomic layer deposition. The electrical and optical properties were characterized using Hall measurements, spectroscopic ellipsometry and UV-visible spectrophotometry. The electronic concentration and the mobility were found to be critically dependent on the deposition temperature, exhibiting increased resistivity and reduced electronic mobility at low temperature. The corresponding optical properties were measured as a function of photon energy ranging from 1.5 to 5.0 eV. The simulated extinction coefficients allowed the determination of optical band gaps, i.e., ranging from 3.36 to 3.41 eV. The electronic carrier concentration appears to be related to the reduction in the corresponding band gap in ZnO thin films.

Keywords

References

  1. J.-H. Park, K.-J. Ahn, K.-I. Park, S.-I. Na, and H.-K. Kim, “An Al-Doped ZnO Electrode Grown by Highly Efficient Cylindrical Rotating Magnetron Sputtering for Low Cost Organic Photovoltaics,” J. Phys. D: Appl. Phys., 43 115101 1-6 (2010).
  2. S.-M. Park, T. Ikegami, and K. Ebihara, “Effects of Substrate Temperature on the Properties of Ga-doped ZnO by Pulsed Laser Deposition,” Thin Solid Films, 513 90-4 (2006). https://doi.org/10.1016/j.tsf.2006.01.051
  3. H.Kim, J.S.Horwitz, S.B.Qadri, and D.B.Chrisey, “Epitaxial Growth of Al-doped ZnO Thin Films Grown by Pulsed Laser Deposition,” Thin Solid Films, 420-21 107-11 (2002).
  4. R. L. Hoffman, B. J. Norris, and J. F. Wager, “ZnO-based Transparent Thin-Film Transistors,” Appl. Phys. Lett., 82 [53] 733-35 (2005). https://doi.org/10.1063/1.1542677
  5. K. Nomura, H. Ohta, K. Ueda, T. Kamiya, M. Hirano, and H. Hosono, “Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor,” Science, 300 1269-72 (2003). https://doi.org/10.1126/science.1083212
  6. E. Chong, K. C. Jo, and S. Y. Lee, “High Stability of Amorphous Hafnium-Indium-Zinc-Oxide Thin Film Transistor,” Appl. Phys. Lett., 96 152102 1-3 (2010).
  7. M. Ito, M. Kon, C. Miyazaki, N. Ikeda, M. Ishizaki, R. Matsubara, Y. Ugajin, and N. Sekine, “Amorphous Oxide TFT and Their Applications in Electrophoretic Displays,” Physica Status Solidi (a), 205 [8] 1885-94 (2008). https://doi.org/10.1002/pssa.200778910
  8. Y. Ohya, T. Niwa, T. Ban, and Y. Takahashi, “Thin Film Transistor of ZnO Fabricated by Chemical Solution Deposition,” Jpn. J. Appl. Phys., 40 297-98 (2001). https://doi.org/10.1143/JJAP.40.297
  9. M. Leskela and M. Ritala, “Atomic Layer Deposition (ALD): from Precursors to Thin Film Structures,” Thin Solid Films, 409 138-46 (2002). https://doi.org/10.1016/S0040-6090(02)00117-7
  10. M. Ritala, M. Leskelä, J.-P. Dekker, C. Mutsaers, P. J. Soininen, and J. Skarp, “Perfectly Conformal TiN and $Al_{2}O_{3}$ Films Deposited by Atomic Layer Deposition,” Chem. Vap. Dep., 5 [1] 7-9 (1999). https://doi.org/10.1002/(SICI)1521-3862(199901)5:1<7::AID-CVDE7>3.0.CO;2-J
  11. V. Srikant and D. R. Clarke, “On the Optical Band Gap of Zinc Oxide,” J. Appl. Phys., 83 [10] 5447-51 (1998). https://doi.org/10.1063/1.367375
  12. H. Fujiwara, Data Analysis Examples in Spectroscopic Ellipsometry: Principles and Applications, pp. 249-310, John Wiley & Sons. Ltd. Chichester, England 2007.

Cited by

  1. Comparison between the Results of Internal Fixation Using Proximal Femur Nail Anti-rotation and Bipolar Hemiarthroplasty in Treatment of Unstable Intertrochanteric Fractures of Elderly Patients vol.24, pp.1, 2012, https://doi.org/10.5371/jkhs.2012.24.1.45
  2. Self-Assembled Monolayer-Functionalized Half-Metallic Manganite for Molecular Spintronics vol.6, pp.10, 2012, https://doi.org/10.1021/nn302458z
  3. Preparation of Al doped ZnO thin films by MOCVD using ultrasonic atomization vol.33, pp.1-2, 2014, https://doi.org/10.1007/s10832-014-9895-3
  4. Role of surface in high photoconductive gain measured in ZnO nanowire-based photodetector vol.17, pp.4, 2015, https://doi.org/10.1007/s11051-015-2973-x
  5. Atomic layer deposition of ZnO: a review vol.29, pp.4, 2014, https://doi.org/10.1088/0268-1242/29/4/043001