Journal of the Microelectronics and Packaging Society (마이크로전자및패키징학회지)

The Korean Microelectronics and Packaging Society (한국마이크로전자및패키징학회)
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Temperature Measurement and Contact Resistance of Au Stud Bump Bonding and Ag Paste Bonding with Thermal Heater Device

Au 스터드 범프 본딩과 Ag 페이스트 본딩으로 연결된 소자의 온도 측정 및 접촉 저항에 관한 연구

  • Kim, Deuk-Han (Dept. of Materials Engineering, Hanbat National University) ;
  • Yoo, Se-Hoon (Korea Institute of Industrial Tehcnology, Micro-Joining Center) ;
  • Lee, Chang-Woo (Korea Institute of Industrial Tehcnology, Micro-Joining Center) ;
  • Lee, Taek-Yeong (Dept. of Materials Engineering, Hanbat National University)
  • 김득한 (한밭대학교 재료공학) ;
  • 유세훈 (한국생산기술연구원 마이크로조이닝센터) ;
  • 이창우 (한국생산기술연구원 마이크로조이닝센터) ;
  • 이택영 (한밭대학교 재료공학)
  • Received : 2009.08.12
  • Accepted : 2010.06.16
  • Published : 2010.06.30
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Abstract

The device with tantalum silicide heater were bonded by Ag paste and Au SBB(Stud Bump Bonding) onto the Au coated substrate. The shear test after Au ABB and the thermal performance under current stressing were measured. The optimum condition of Au SBB was determined by fractured surface after die shear test and $350^{\circ}C$ for substrate, $250^{\circ}C$ for die during flip chip bonding with bonding load of about 300 g/bump. With applying 5W through heater on the device, the maximum temperature with Ag paste bonding was about $50^{\circ}C$. That with Au SBB on Au coated Si substrate showed $64^{\circ}C$. The difference of maximum temperatures is only $14^{\circ}C$, even though the difference of contact area between Ag paste bonding and Au SBB is by about 300 times and the simulation showed that the contact resistance might be one of the reasons.

탄탈륨실리사이드 히터가 내장된 소자를 Ag 페이스트와 Au SBB(Stud Bump Bonding)를 이용하여 Au가 코팅 된 기판에 각각 접합 하였다. 전단 테스트와 전류를 흐르면서 열 성능을 측정하였다. Au 스터드 범프 본딩의 최적 플립칩 접합조건은 전단 후 파괴면 관찰하여 설정하였으며, 기판 온도를 $350^{\circ}C$, 소자 온도를 $250^{\circ}C$에서 하중을 300 g/bump 로 하여 접합하는 경우가 최적 조건이였다. 히터에 5 W 인가시 소자의 온도는 Ag 페이스트를 이용한 접합의 경우 최대 온도는 약 $50^{\circ}C$이었으며, Au 금속층을 갖고 있는 실리콘 기판에 Au 스터드 본딩으로 접합된 인 경우 약 $64^{\circ}C$를 나타내었다. 기판과의 접촉면적이 와이어본딩과 Au 스터드 범프 본딩 가 약 300배가 차이가 나는 경우 약 $14^{\circ}C$ 차이를 나타내었고, 전사모사를 통하여 접합면의 접촉저항이 중요한 이유임을 알 수 있었다.

Keywords

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