반도체디스플레이기술학회지 (Journal of the Semiconductor & Display Technology)

한국반도체디스플레이기술학회 (The Korean Society Of Semiconductor & Display Technology)
권호 표지

ITO/glass 기판위에 제작된 Cross linked PVA 유기 게이트 절연막의 전기적 특성

Electrical Properties of Organic PVA Gate Insulator Film on ITO/Glass Substrates

  • 최진은 (단국대학교 전자전기공학과) ;
  • 공수철 (단국대학교 전자전기공학과) ;
  • 전형탁 (한양대학교 신소재공학과) ;
  • 박형호 (연세대학교 세라믹공학과) ;
  • 장호정 (단국대학교 전자전기공학과)
  • Choi, Jin-Eun (Department of Electronics and Eletrical Engineering, Dankook University) ;
  • Gong, Su-Cheol (Department of Electronics and Eletrical Engineering, Dankook University) ;
  • Jeon, Hyeong-Tag (Division of Materials Science and Engineering, Hanyang University) ;
  • Park, Hyung-Ho (Dept. of Ceramics Engineering, Yonsei University) ;
  • Chang, Ho-Jung (Department of Electronics and Eletrical Engineering, Dankook University)
  • 투고 : 2010.09.22
  • 심사 : 2010.11.30
  • 발행 : 2010.12.31
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초록

The PVA (poly-vinyl alcohol) insulators were spun coated onto ITO coated glass substrates with the capacitors of Glass/ITO/PVA/Al structure. The effects of PVA concentrations (3.0, 4.0 and 5.0 wt%) on the morphology and electrical properties of the films were investigated. As the concentration of PVA increased from 3.0 to 5.0 wt%, the leakage current of device decreased from 17.1 to 0.23 pA. From the AFM measurement, the RMS value decreased with increasing PVA concentration, showing the improvement of insulator film roughness. The capacitances of the films with PVA concentrations of 4.0 and 5.0 wt% were about 28.1 and 24.2 nF, respectively. The lowest leakage current of 1.77 PA was obtained at the film thickness of 117.5 nm for the device with fixed PVA concentration of 5.0 wt%.

키워드

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