Journal of the Korean Ceramic Society (한국세라믹학회지)

The Korean Ceramic Society (한국세라믹학회)
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Application of 3-dimensional phase-diagram using FactSage in C3H8-SiCl4-H2 System

C3H8-SiCl4-H2 시스템에서 FactSage를 이용한 압력-조성-온도 3차원 상평형도의 응용

  • Kim, Jun-Woo (Icheon Branch, Korea Institute of Ceramic Engineering and Technology) ;
  • Kim, Hyung-Tae (Icheon Branch, Korea Institute of Ceramic Engineering and Technology) ;
  • Kim, Kyung-Ja (Icheon Branch, Korea Institute of Ceramic Engineering and Technology) ;
  • Lee, Jong-Heun (Department of Material Science and Engineering, Korea University) ;
  • Choi, Kyoon (Icheon Branch, Korea Institute of Ceramic Engineering and Technology)
  • 김준우 (한국세라믹기술원 이천분원) ;
  • 김형태 (한국세라믹기술원 이천분원) ;
  • 김경자 (한국세라믹기술원 이천분원) ;
  • 이종흔 (고려대학교 재료공학과) ;
  • 최균 (한국세라믹기술원 이천분원)
  • Received : 2011.10.05
  • Accepted : 2011.10.11
  • Published : 2011.11.30
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Abstract

In order to deposit a homogeneous and uniform ${\beta}$-SiC films by chemical vapor deposition, we constructed the phase-diagram of ${\beta}$-SiC over graphite and silicon via computational thermodynamic calculation considering pressure(P), temperature(T) and gas composition(C) as variables in $C_3H_8-SiCl_4-H_2$ system. During the calculation, the ratio of Cl/Si and C/Si is maintained to be 4 and 1, respectively, and H/Si ratio is varied from 2.67 to 15,000. The P-T-C diagram showed very steep phase boundary between SiC+C and SiC region perpendicular to H/Si axis and also showed SiC+Si region with very large H/Si value of ~6700. The diagram can be applied not only to the prediction of the deposited phase composition but to compositional variation due to the temperature distribution in the reactor. The P-T-C diagram could provide the better understanding of chemical vapor deposition of silicon carbide.

Keywords

References

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