The Transactions of The Korean Institute of Electrical Engineers (전기학회논문지)

The Korean Institute of Electrical Engineers (대한전기학회)
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A Study on the SPICE Model Parameter Extraction Method for the DC Model of the High Voltage MOSFET

High Voltage MOSFET의 DC 해석 용 SPICE 모델 파라미터 추출 방법에 관한 연구

  • 이은구 (부천대학교 정보통신과)
  • Received : 2011.09.20
  • Accepted : 2011.11.21
  • Published : 2011.12.01
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Abstract

An algorithm for extracting SPICE MOS level 2 model parameters for the high voltage MOSFET DC model is proposed. The optimization method for analyzing the nonlinear data of the current-voltage curve using the Gauss-Newton algorithm is proposed and the pre-process step for calculating the threshold voltage and the mobility is proposed. The drain current obtained from the proposed method shows the maximum relative error of 5.6% compared with the drain current of 2-dimensional device simulation for the high voltage MOSFET.

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References

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