Journal of Magnetics

  • 제16권4호
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  • Pages.328-331
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  • 2011
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  • 1226-1750(pISSN)
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  • 2233-6656(eISSN)
한국자기학회 (The Korean Magnetics Society)
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Multilevel Magnetization Switching in a Dual Spin Valve Structure

  • Chun, B.S. (Korea Research Institute of Standards and Science, Division of Industrial Metrology) ;
  • Jeong, J.S. (School of Electrical and Computer Engineering, University of Seoul)
  • 투고 : 2011.08.29
  • 심사 : 2011.10.24
  • 발행 : 2011.12.31
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초록

Here, we describe a dual spin valve structure with distinct switching fields for two pinned layers. A device with this structure has a staircase of three distinct magnetoresistive states. The multiple resistance states are achieved by controlling the exchange coupling between two ferromagnetic pinned layers and two adjacent anti-ferromagnetic pinning layers. The maximum magnetoresistance ratio is 7.9% for the current-perpendicular-to-plane and 7.2% for the current-in-plane geometries, with intermediate magnetoresistance ratios of 3.9% and 3.3%, respectively. The requirements for using this exchange-biased stack as a three-state memory device are also discussed.

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참고문헌

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