Journal of Magnetics

  • 제16권4호
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  • Pages.332-336
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  • 2011
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  • 1226-1750(pISSN)
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  • 2233-6656(eISSN)
한국자기학회 (The Korean Magnetics Society)
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Effect on N Defect in Cu-doped III-nitride Semiconductors

  • Kang, Byung-Sub (Department of Nano Science and Mechanical Engineering, Konkuk University) ;
  • Lee, Jae-Kwang (Department of Nano Science and Mechanical Engineering, Konkuk University) ;
  • Lim, Yong-Sik (Department of Nano Science and Mechanical Engineering, Konkuk University) ;
  • Song, Kie-Moon (Department of Nano Science and Mechanical Engineering, Konkuk University) ;
  • Chae, Kwang-Pyo (Department of Nano Science and Mechanical Engineering, Konkuk University)
  • 투고 : 2011.06.16
  • 심사 : 2011.12.13
  • 발행 : 2011.12.31
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초록

We studied the effect on the electronic and magnetic properties of the N defect in clean and Cu-doped wurtzite III-nitrides by using the first-principles calculations. When it is doped two Cu atoms in the nearest neighboring sites, the system of AlN, GaN, or InN with the N vacancy is energetically more favorable than that without the N vacancy site. When the Cu concentration increases, the total magnetic moment of a supercell becomes small. The ferromagnetism of Cu atom is very low due to the weak 3d-3d coupling. It is noticeable that the spin-exchange interaction between the Cu-3d and N defect states is important.

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